Direct atomic structure determination of epitaxially grown films: (formula presented) on GaAs(100)

M. Sowwan, Y. Yacoby, J. Pitney, R. MacHarrie, M. Hong, J. Cross, D. A. Walko, R. Clarke, R. Pindak, E. A. Stern

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We have used coherent bragg rod analysis (COBRA) to investigate the atomic structure of an epitaxial (formula presented) film grown on a (100) GaAs substrate. COBRA is a method to directly obtain the structure of systems periodic in two dimensions by determining the complex scattering factors along the substrate-defined Bragg rods. The system electron density and atomic structure are obtained by Fourier transforming the complex scattering factors into real space. The results show that the stacking order of the (formula presented) film layers is different from that of cubic bulk (formula presented) and resembles the stacking order of Ga and As layers in GaAs. Furthermore, in the first few (formula presented) layers, Gd atoms are displaced to positions right above the Ga and As positions in the substrate, and they relax towards bulk (formula presented) positions with increasing distance from the interface.

Original languageEnglish
Pages (from-to)1-12
Number of pages12
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number20
DOIs
StatePublished - 2002
Externally publishedYes

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