Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlOx gate

Lior Shani; Pim Lueb; Gavin Menning; Mohit Gupta; Colin Riggert; Tyler Littmann; Frey Hackbarth; Marco Rossi; Jason Jung; Ghada Badawy; Marcel A. Verheijen; Paul A. Crowell; Erik P.A.M. Bakkers; Vlad S. Pribiag

doi:10.1088/2633-4356/ad2d6b

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO_x gate

Lior Shani, Pim Lueb, Gavin Menning, Mohit Gupta, Colin Riggert, Tyler Littmann, Frey Hackbarth, Marco Rossi, Jason Jung, Ghada Badawy, Marcel A. Verheijen, Paul A. Crowell, Erik P.A.M. Bakkers, Vlad S. Pribiag

Research output: Contribution to journal › Article › peer-review

Abstract

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO _x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

Original language	English
Article number	015101
Journal	Materials for Quantum Technology
Volume	4
Issue number	1
DOIs	https://doi.org/10.1088/2633-4356/ad2d6b
State	Published - 1 Mar 2024
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2024 The Author(s). Published by IOP Publishing Ltd.

Funding

This work was supported by the Department of Energy under Award No. DE-SC0019274. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the National Science Foundation through the National Nanotechnology Coordinated Infrastructure (NNCI) under Award Number ECCS-2025124. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC (Award Number DMR-2011401) and the NNCI (Award Number ECCS-2025124) programs. This work was supported by the European Research Council (ERC TOCINA 834290). The authors recognize Solliance, a solar energy R&D initiative of ECN, TNO, Holst, TU/e, IMEC and Forschungszentrum Jülich, and the Dutch province of Noord-Brabant for funding the TEM facility. TU/e acknowledges the research program ‘Materials for the Quantum Age’ (QuMat) for financial support. This program (Registration Number 024.005.006) is part of the Gravitation program financed by the Dutch Ministry of Education, Culture and Science (OCW).

Funders	Funder number
Dutch province of Noord-Brabant	024.005.006
NNCI
National Science Foundation	ECCS-2025124
U.S. Department of Energy	DE-SC0019274
Materials Research Science and Engineering Center, Harvard University	DMR-2011401
Engineering Research Centers	TOCINA 834290
Interuniversitair Micro-Electronica Centrum VZW
European Commission
Forschungszentrum Jülich
Ministerie van Onderwijs, Cultuur en Wetenschap

Keywords

InSb
few-layers-graphene
nanowire
quantum transport

Access to Document

10.1088/2633-4356/ad2d6b

Cite this

Shani, L., Lueb, P., Menning, G., Gupta, M., Riggert, C., Littmann, T., Hackbarth, F., Rossi, M., Jung, J., Badawy, G., Verheijen, M. A., Crowell, P. A., Bakkers, E. P. A. M., & Pribiag, V. S. (2024). Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO_x gate. Materials for Quantum Technology, 4(1), Article 015101. https://doi.org/10.1088/2633-4356/ad2d6b

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abstract = "Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry-P{\'e}rot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.",

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Shani, L, Lueb, P, Menning, G, Gupta, M, Riggert, C, Littmann, T, Hackbarth, F, Rossi, M, Jung, J, Badawy, G, Verheijen, MA, Crowell, PA, Bakkers, EPAM & Pribiag, VS 2024, 'Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO_x gate', Materials for Quantum Technology, vol. 4, no. 1, 015101. https://doi.org/10.1088/2633-4356/ad2d6b

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AU - Riggert, Colin

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AU - Jung, Jason

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