Diffusional growth of quantum dots in thin SiO-Cu films irradiated by laser pulses

Yu Kaganovskii, M. Rosenbluh

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


High density diffraction gratings have been fabricated by irradiating thin films of SiO-Cu with two pulsed laser beams of 7 ns pulse duration, and pulse intensities of 2-6 MW/cm2. Gratings were formed due to fast growth of Cu particles at the regions of high light intensity. The diffusional growth of quantum dot Cu particles in thin films of SiO-Cu was studied by transmission electron microscopy. It was measured that the average radius growth rate, dR/dt, is about 10-4-10-3 m/s depending on the light intensity. The heat distribution around the small absorbing particles inside the transparent matrix during the laser pulse has been analyzed, and a method for the determination of the diffusion activation energy using a periodically varying light intensity has been developed. Diffusion coefficients which limit the growth kinetics are of order of 10-9-10-11 m 2/s and correspond to diffusion in the liquid surrounding the hot metal particle. The activation energy was found to be 20 kJ/mol which also corresponds to diffusion in a liquid SiO matrix.

Original languageEnglish
Pages (from-to)1607-1612
Number of pages6
JournalDefect and Diffusion Forum
StatePublished - 1997


  • Diffraction gratings
  • Diffusion growth
  • Kinetics
  • Metal particles
  • Pulsed laser
  • Quantum dot materials
  • Thin films


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