Diffusion in the presence of quenched random bias fields: A two-dimensional generalization of the Sinai model

Robin L. Blumberg Selinger, Shlomo Havlin, François Leyvraz, Moshe Schwartz, H. Eugene Stanley

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

We report a theoretical and numerical study of diffusion in two dimensions in the presence of quenched random bias fields. The local bias field is taken to be the gradient of a random scalar potential V(i,j). We consider the special case V(i,j)=V1(i)+V2(j), where the gradients of V1 and V2 are chosen to be randomly ±0 with 0<01. We find that asymptotically (t) the mean square displacement grows with the time t as (lnt)4, just as in the one-dimensional Sinai model.

Original languageEnglish
Pages (from-to)6755-6758
Number of pages4
JournalPhysical Review A
Volume40
Issue number11
DOIs
StatePublished - 1989
Externally publishedYes

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