Development of a silicon-diamond interface on (111) diamond

A. K. Schenk, M. J. Sear, N. Dontschuk, A. Tsai, K. J. Rietwyk, A. Tadich, B. C.C. Cowie, L. Ley, A. Stacey, C. I. Pakes

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We report the preparation of a silicon terminated (111) diamond surface. Low energy electron diffraction and core level photoemission demonstrate that this surface is highly ordered and homogeneous and possesses a negative electron affinity. Our analysis suggests that the surface reconstruction begins with the formation of silicon trimers that coalesce into a rhombohedral 2D silicon layer reminiscent of rhombohedral silicene.

Original languageEnglish
Article number071602
JournalApplied Physics Letters
Volume116
Issue number7
DOIs
StatePublished - 18 Feb 2020
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2020 Author(s).

Funding

This research was undertaken using the Soft x-ray Spectroscopy beamline at the Australian Synchrotron, part of ANSTO. This work was performed in part at the Melbourne Centre for Nanofabrication (MCN) in the Victorian Node of the Australian National Fabrication Facility (ANFF). This work was supported by the Australian Research Council through Grant Nos. DP150101673, CE170100012, and CE170100026. This work was supported by the Research Council of Norway through its Centres of Excellence funding scheme, Project No. 262633, “QuSpin,” and the Fripro program, Project No. 250985 “FunTopoMat.”

FundersFunder number
Australian Research CouncilCE170100026, CE170100012, DP150101673
Norges Forskningsråd250985, 262633

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