Abstract
The considerable capabilities of the dc hopping conductivity measurements as a method for investigating the nature of the microscopic distribution of impurities are demonstrated for p-type Ge doped with gallium.
| Original language | English |
|---|---|
| Pages (from-to) | 120-121 |
| Number of pages | 2 |
| Journal | Semiconductors |
| Volume | 8 |
| Issue number | 1 |
| State | Published - 1974 |
| Externally published | Yes |