Determination of the impurity concentration in heavily doped inhomogeneous semiconductors from the measurement of the low-temperature conductivity

I. Shlimak, R. Ussyshkin, L. Resnick, V. Ginodman

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Abstract

A method has been developed for determining the effective concentration of shallow impurities N* reponsible for the low-temperature conductivity in the vicinity of the metal-insulator transition for inhomogeneous samples of n-Ge:As. The method is based on the measurement of two ratios of sample resistance γ-R(4.2 K)/R(300 K), β=R(2.0 K)/R(4.2 K) and the conductivity σ(4.2 K). The next step consists of plotting and σ(4.2) vs β. Assuming that β is the most reliable parameter, one can calculate, after an averaging procedare, the corrected values of γ*, π*(4.2) and the resistivity at room temperature ρ*(300)=[γ*π*(4.2)]-1. Finally, using the known dependence ρ(300)=f(N) for homogeneous samples, one can obtain the values of N*. The dependences of N* on β and on γ are plotted. The scaling behavior of the conductivity of the Ge:As samples with corrected values of π*(4.2) and N* has been observed down to T=100 mK.

Original languageEnglish
Pages (from-to)115-118
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume61
Issue number2
DOIs
StatePublished - Aug 1995

Keywords

  • 72.20
  • 81.40

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