TY - JOUR

T1 - Determination of the impurity concentration in heavily doped inhomogeneous semiconductors from the measurement of the low-temperature conductivity

AU - Shlimak, I.

AU - Ussyshkin, R.

AU - Resnick, L.

AU - Ginodman, V.

PY - 1995/8

Y1 - 1995/8

N2 - A method has been developed for determining the effective concentration of shallow impurities N* reponsible for the low-temperature conductivity in the vicinity of the metal-insulator transition for inhomogeneous samples of n-Ge:As. The method is based on the measurement of two ratios of sample resistance γ-R(4.2 K)/R(300 K), β=R(2.0 K)/R(4.2 K) and the conductivity σ(4.2 K). The next step consists of plotting and σ(4.2) vs β. Assuming that β is the most reliable parameter, one can calculate, after an averaging procedare, the corrected values of γ*, π*(4.2) and the resistivity at room temperature ρ*(300)=[γ*π*(4.2)]-1. Finally, using the known dependence ρ(300)=f(N) for homogeneous samples, one can obtain the values of N*. The dependences of N* on β and on γ are plotted. The scaling behavior of the conductivity of the Ge:As samples with corrected values of π*(4.2) and N* has been observed down to T=100 mK.

AB - A method has been developed for determining the effective concentration of shallow impurities N* reponsible for the low-temperature conductivity in the vicinity of the metal-insulator transition for inhomogeneous samples of n-Ge:As. The method is based on the measurement of two ratios of sample resistance γ-R(4.2 K)/R(300 K), β=R(2.0 K)/R(4.2 K) and the conductivity σ(4.2 K). The next step consists of plotting and σ(4.2) vs β. Assuming that β is the most reliable parameter, one can calculate, after an averaging procedare, the corrected values of γ*, π*(4.2) and the resistivity at room temperature ρ*(300)=[γ*π*(4.2)]-1. Finally, using the known dependence ρ(300)=f(N) for homogeneous samples, one can obtain the values of N*. The dependences of N* on β and on γ are plotted. The scaling behavior of the conductivity of the Ge:As samples with corrected values of π*(4.2) and N* has been observed down to T=100 mK.

KW - 72.20

KW - 81.40

UR - http://www.scopus.com/inward/record.url?scp=0029356494&partnerID=8YFLogxK

U2 - 10.1007/BF01538375

DO - 10.1007/BF01538375

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0029356494

SN - 0947-8396

VL - 61

SP - 115

EP - 118

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 2

ER -