Design and simulation analysis of NWFET for digital application

Shashi Bala, Raj Kumar, Jeetendra Singh, Sanjeev Kumar Sharma

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

1 Scopus citations

Abstract

This chapter presents the design and simulation analysis nanowire-based FET (NWFET) for best possible Ig-Vgs characteristics. A NWFET is a device in which channel is wire-like structure with diameter or lateral dimension in nanometer (10-9 m) range. Performance analysis has been done for various design and process parameters variation to propose optimized parameter for best performance. Although a lot of focus has been put on homogenous Si based NWFETs, there has been a rising interest in III-V NWFETs. This is mainly due to the excellent carrier transport properties are provided by these materials. NWFETs have ability to suppress SCEs and are also good in suppressing OFF-current (IOFF), because of gate all around (GAA) configuration. Secondly, NWFETs have large ON-current (ION) due to quasi one-dimensional (1D) conduction of NWs, and as a result of low carrier scattering, conduction of NWs-based devices is very large.

Original languageEnglish
Title of host publicationInnovative Applications of Nanowires for Circuit Design
PublisherIGI Global
Pages123-138
Number of pages16
ISBN (Electronic)9781799864691
ISBN (Print)9781799864677
DOIs
StatePublished - 20 Nov 2020
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2021, IGI Global.

Fingerprint

Dive into the research topics of 'Design and simulation analysis of NWFET for digital application'. Together they form a unique fingerprint.

Cite this