Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

Parveen Kumar, Balwinder Raj, Girish Wadhwa, Balwinder Singh, Raj Kumar

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Highlights Design and analysis of Junctionless based Gate-All-Around N+ doped layer Nanowire tunnel-field-effect-transistor (JLGAA-NTFET) for biosensor application. Various biomolecules such as uricase, streptavidin, protein, biotin, Uriease, Amino-propyl triethoxysilane (ATS) are used during simulation. The N+ doped layer is installed to improve the tunneling probability of the device which further enhances the device sensitivity. The nanocavity area is created a layer in sandwiched between the oxide layer of source-gate and electrodes metal of source-gate. The JLGAA-NTFET shows the reduced leakage currents in terms of short-channel-effects (SCEs) and superior controllability over the channel.

Original languageEnglish
Article number017002
JournalECS Journal of Solid State Science and Technology
Volume13
Issue number1
DOIs
StatePublished - Jan 2024
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2024 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.

Funding

Declaration of Competing Interest. The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Keywords

  • TFET
  • biomolecules
  • biosensor
  • nanowire
  • sensitivity

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