Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

Parveen Kumar, Balwinder Raj, Girish Wadhwa, Balwinder Singh, Raj Kumar

Research output: Contribution to journalArticlepeer-review

Abstract

Highlights Design and analysis of Junctionless based Gate-All-Around N+ doped layer Nanowire tunnel-field-effect-transistor (JLGAA-NTFET) for biosensor application. Various biomolecules such as uricase, streptavidin, protein, biotin, Uriease, Amino-propyl triethoxysilane (ATS) are used during simulation. The N+ doped layer is installed to improve the tunneling probability of the device which further enhances the device sensitivity. The nanocavity area is created a layer in sandwiched between the oxide layer of source-gate and electrodes metal of source-gate. The JLGAA-NTFET shows the reduced leakage currents in terms of short-channel-effects (SCEs) and superior controllability over the channel.

Original languageEnglish
Article number017002
JournalECS Journal of Solid State Science and Technology
Volume13
Issue number1
DOIs
StatePublished - Jan 2024
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2024 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.

Keywords

  • TFET
  • biomolecules
  • biosensor
  • nanowire
  • sensitivity

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