Design and analysis of III-V double junction tandem solar cell

The efficiency Single junction solar cells have reached to their limits. Therefore, Tandem solar cells are being considered as promising structure due to its high power conversion efficiencies (PCEs) at very low affordable cost. III-V materials are now found to be most suitable for multijunction tandem solar cells designs owing to their range of properties. This paper demonstrates the simulation of two different single junction cell based on III-V materials based on their energy band gap. Then, double junction tandem cell have been constructed using the SCAPS-1D simulator. InGaP based solar cell is placed on top and GaAs at bottom in the double junction tandem cell structure due to their band gap. From the simulation results, it has been found that InGaP and GaAs based solar cell shows the 23.45 % and 11.47% efficiency respectively. However, double junction tandem cell has managed to provide more than 30%. The effect of Thickness of GaAs has also been analyzed Voc, Jsc, FF and Efficiency. The Illumination value also is changed to see the impact on the performance parameter of tandem solar cell. Therefore, Tandem solar cells can be most suitable and attractive way to get maximum PCEs for different applications.