Deposition of oxide thin films on silicon using organic self-assembled monolayers

Mark R. DeGuire, Hyunjung Shin, R. J. Collins, Monika Agarwal, Chaim N. Sukenik, Arthur H. Heuer

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

Crystalline oxide thin films have been synthesized at low temperatures from aqueous liquid solutions. A key element of the approach is the use of organic self-assembled monolayers (SAMs) on the substrate to promote the growth of adherent inorganic films. A SAM is a close-packed, highly ordered array of long-chain hydrocarbon molecules, anchored to the substrate by covalent bonds. The terminating functional group on the SAM surface is chosen so as to initiate and help sustain the formation of the oxide film when the substrate is immersed in the oxide precursor solution. Synthesis, microstructural characterization, and properties of TiO 2, ZrO 2, SiO 2, and Y 2O 3 films are surveyed. Crystalline films were formed either directly from solution, or through subsequent heat treatments at temperatures that in most cases were lower than typical sol-gel or vapor phase deposition processes. All depositions were from aqueous solutions onto single-crystal (100) silicon. The ability to produce patterned films on a micron scale has been demonstrated, taking advantage of the selective deposition characteristics towards different surface functional groups of the SAM. The role of the SAM in oxide film formation is discussed.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsMassood Tabib-Azar
Pages88-99
Number of pages12
StatePublished - 1996
Externally publishedYes
EventIntegrated Optics and Microstructures III - San Jose, CA, USA
Duration: 29 Jan 199629 Jan 1996

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2686
ISSN (Print)0277-786X

Conference

ConferenceIntegrated Optics and Microstructures III
CitySan Jose, CA, USA
Period29/01/9629/01/96

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