Deposition of diamond using an electron cyclotron resonance plasma system

Donald R. Gilbert, Rijiv Singh, W. Brock Alexander, Dong Gu Lee, Patrick Doering

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

We have used an electron cyclotron resonance plasma system to perform chemical vapor deposition experiments on single-crystal, (110) oriented diamond substrates. The depositions were carried out at 0.060 Torr using mixtures of methanol in hydrogen. Substrate temperatures were varied from approximately 620 to 800 °C. The film morphology was examined using SEM and microstructural phase determination was attempted using micro-Raman spectroscopy. Based on the results of these experiments, we have determined general trends for the characteristics of films deposited on diamond from the ECR plasma at low pressures and temperatures.

Original languageEnglish
Pages (from-to)301-306
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume339
DOIs
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: 4 Apr 19948 Apr 1994

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