Abstract
Sapphire is an important material for infrared-transmission applications and SOI device structures. The use of diamond as a protective coating for sapphire is a desirable, yet elusive process. The primary obstacle to the successful deposition of diamond on sapphire is the large mismatch in thermal expansion characteristics between the two materials. To overcome this problem, we have used a low temperature deposition process involving an electron cyclotron resonance (ECR) assisted plasma CVD system. Continuous, adherent diamond films have been deposited over 1 to 2 cm2 areas. These films have been characterized for structural quality using Raman spectroscopy and x-ray diffraction.
Original language | English |
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Pages (from-to) | 371-375 |
Number of pages | 5 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 423 |
DOIs | |
State | Published - 1996 |
Externally published | Yes |
Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 8 Apr 1996 → 11 Apr 1996 |