Abstract
Some changes of the activation energy ϵ1 of the conductivity of Ge which are produced by variations of the compensation ratio K are studied in the region of temperatures where the conductivity is related to electrons released from shallow donors into the conduction band. A substantial increase of ϵ1 is found for shallow donor concentrations of about 1 × 1016 cm−3 and 1 – K → 0. This finding is in good quantitative agreement with the theory of Shklovskii and Efros.
| Original language | English |
|---|---|
| Pages (from-to) | 325-328 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B): Basic Research |
| Volume | 47 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1 Sep 1971 |
| Externally published | Yes |
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