Defect states and their energetic position and distribution in organic molecular semiconductors

Akanksha Sharma; Sarita Yadav; Pramod Kumar; Sumita Ray Chaudhuri; Subhasis Ghosh

doi:10.1063/1.4801636

Defect states and their energetic position and distribution in organic molecular semiconductors

Akanksha Sharma, Sarita Yadav, Pramod Kumar, Sumita Ray Chaudhuri, Subhasis Ghosh

Research output: Contribution to journal › Article › peer-review

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Abstract

Energetic position and distribution of defect states due to structural disorder in pentacene and copper phthalocyanine have been obtained by capacitance based spectroscopic techniques. It has been shown that capacitance-frequency and capacitance-voltage characteristics exhibit Gaussian distribution of traps with an energetic position at around 0.5 eV above the highest occupied molecular orbital level of the pentacene and CuPc. These traps have been created by varying growth conditions and almost identical trap parameters in pentacene and copper phthalocyanine indicate that similar structural disorder is responsible for these traps.

Original language	English
Article number	143301
Journal	Applied Physics Letters
Volume	102
Issue number	14
DOIs	https://doi.org/10.1063/1.4801636
State	Published - 8 Apr 2013
Externally published	Yes

Bibliographical note

Funding Information:
A.S. and S.Y. thank CSIR, India, for the financial support through fellowship. This work was partly supported by DST, Government of India.

Funding

A.S. and S.Y. thank CSIR, India, for the financial support through fellowship. This work was partly supported by DST, Government of India.

Funders	Funder number
Council of Scientific and Industrial Research, India
Department of Science and Technology, Government of West Bengal

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title = "Defect states and their energetic position and distribution in organic molecular semiconductors",

abstract = "Energetic position and distribution of defect states due to structural disorder in pentacene and copper phthalocyanine have been obtained by capacitance based spectroscopic techniques. It has been shown that capacitance-frequency and capacitance-voltage characteristics exhibit Gaussian distribution of traps with an energetic position at around 0.5 eV above the highest occupied molecular orbital level of the pentacene and CuPc. These traps have been created by varying growth conditions and almost identical trap parameters in pentacene and copper phthalocyanine indicate that similar structural disorder is responsible for these traps.",

author = "Akanksha Sharma and Sarita Yadav and Pramod Kumar and \{Ray Chaudhuri\}, Sumita and Subhasis Ghosh",

note = "Funding Information: A.S. and S.Y. thank CSIR, India, for the financial support through fellowship. This work was partly supported by DST, Government of India.",

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AU - Sharma, Akanksha

AU - Yadav, Sarita

AU - Kumar, Pramod

AU - Ray Chaudhuri, Sumita

AU - Ghosh, Subhasis

N1 - Funding Information: A.S. and S.Y. thank CSIR, India, for the financial support through fellowship. This work was partly supported by DST, Government of India.

PY - 2013/4/8

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N2 - Energetic position and distribution of defect states due to structural disorder in pentacene and copper phthalocyanine have been obtained by capacitance based spectroscopic techniques. It has been shown that capacitance-frequency and capacitance-voltage characteristics exhibit Gaussian distribution of traps with an energetic position at around 0.5 eV above the highest occupied molecular orbital level of the pentacene and CuPc. These traps have been created by varying growth conditions and almost identical trap parameters in pentacene and copper phthalocyanine indicate that similar structural disorder is responsible for these traps.

AB - Energetic position and distribution of defect states due to structural disorder in pentacene and copper phthalocyanine have been obtained by capacitance based spectroscopic techniques. It has been shown that capacitance-frequency and capacitance-voltage characteristics exhibit Gaussian distribution of traps with an energetic position at around 0.5 eV above the highest occupied molecular orbital level of the pentacene and CuPc. These traps have been created by varying growth conditions and almost identical trap parameters in pentacene and copper phthalocyanine indicate that similar structural disorder is responsible for these traps.

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Defect states and their energetic position and distribution in organic molecular semiconductors

Abstract

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