Defect chemical explanation for the effect of air anneal on CdS/CuInSe 2 solar cell performance

David Cahen; Rommel Noufi

doi:10.1063/1.100930

Defect chemical explanation for the effect of air anneal on CdS/CuInSe ₂ solar cell performance

David Cahen, Rommel Noufi

Research output: Contribution to journal › Article › peer-review

168 Scopus citations

Abstract

We formulate a consistent defect chemical model of the effect of air/O ₂ anneals on CdS/CuInSe₂ devices. The model centers on O-induced neutralization of (near) surface donor states in CuInSe₂ grains. The simplest identification of these states is with ionized Se vacancies, due to coordinatively unsaturated In on grain surfaces and boundaries.

Original language	English
Pages (from-to)	558-560
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	6
DOIs	https://doi.org/10.1063/1.100930
State	Published - 1989
Externally published	Yes

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@article{b32a40f9c82149ddaffc61911b9ad3cc,

title = "Defect chemical explanation for the effect of air anneal on CdS/CuInSe 2 solar cell performance",

abstract = "We formulate a consistent defect chemical model of the effect of air/O 2 anneals on CdS/CuInSe2 devices. The model centers on O-induced neutralization of (near) surface donor states in CuInSe2 grains. The simplest identification of these states is with ionized Se vacancies, due to coordinatively unsaturated In on grain surfaces and boundaries.",

author = "David Cahen and Rommel Noufi",

year = "1989",

doi = "10.1063/1.100930",

language = "אנגלית",

volume = "54",

pages = "558--560",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Defect chemical explanation for the effect of air anneal on CdS/CuInSe 2 solar cell performance

AU - Cahen, David

AU - Noufi, Rommel

PY - 1989

Y1 - 1989

N2 - We formulate a consistent defect chemical model of the effect of air/O 2 anneals on CdS/CuInSe2 devices. The model centers on O-induced neutralization of (near) surface donor states in CuInSe2 grains. The simplest identification of these states is with ionized Se vacancies, due to coordinatively unsaturated In on grain surfaces and boundaries.

AB - We formulate a consistent defect chemical model of the effect of air/O 2 anneals on CdS/CuInSe2 devices. The model centers on O-induced neutralization of (near) surface donor states in CuInSe2 grains. The simplest identification of these states is with ionized Se vacancies, due to coordinatively unsaturated In on grain surfaces and boundaries.

UR - http://www.scopus.com/inward/record.url?scp=36549093812&partnerID=8YFLogxK

U2 - 10.1063/1.100930

DO - 10.1063/1.100930

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:36549093812

SN - 0003-6951

VL - 54

SP - 558

EP - 560

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Defect chemical explanation for the effect of air anneal on CdS/CuInSe ₂ solar cell performance

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