Abstract
Lead bromide-based halide perovskites are of interest for wide-band-gap (>1.75 eV) absorbers for low-cost solar spectrum splitting to boost solar-to-electrical energy conversion efficiency/area by adding them to c-Si or Cu(In,Ga)Se2 PV cells and for photoelectrochemical solar fuel synthesis. Deep in-gap electronic states in PV absorbers serve as recombination centers and are detrimental for the cell's photovoltaic performance, especially for the open-circuit voltage (Voc). We find four different deep defect states in polycrystalline layers of mixed-cation lead tribromide from high-sensitivity modulated surface photovoltage (SPV) spectroscopy. Measurements were performed with different contact configurations, on complete solar cells and on samples before and after aging or stressing at 85 °C under illumination. Three of the four states, with energies of ∼0.63, 0.73, and 1.35 eV below the conduction band edge, are assigned to intrinsic defects, whereas defect states in the middle of the band gap could be associated with (uncontrolled) impurities.
Original language | English |
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Pages (from-to) | 1150-1157 |
Number of pages | 8 |
Journal | ACS Energy Letters |
Volume | 4 |
Issue number | 5 |
DOIs | |
State | Published - 10 May 2019 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2019 American Chemical Society.
Funding
I.L. thanks the Minerva Stiftung for a short-term research grant. C.R. thanks the HyPerCells (Hybrid Perovskite Solar Cells) joint Graduate School and the Helmholtz International Research School “Hybrid Integrated Systems for Conversion of Solar Energy” (HI-SCORE), an initiative cofunded by the “Initiative and Networking Fund of the Helmholtz Association”. In Rehovot, this work was supported by a grant from the Ullmann family foundation. We thank the reviewers for their constructive comments.
Funders | Funder number |
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Helmholtz International Research School | |
Ullmann Family Foundation | |
Minerva Foundation | |
Helmholtz Association |