Current induced spin injection in Si-MOSFET

I. Shlimak, A. Butenko, D. I. Golosov, K. J. Friedland, S. V. Kravchenko

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Longitudinal resistivity in strong parallel magnetic fields up to B = 14 Tesla was measured in Si-MOSFET with a narrow slot (90nm) in the upper metallic gate that allows to apply different gate voltage across the slot and, therefore, to control the electron density n1 and n2 in two parts of the sample independently. The experimental scheme allows us to pass through the sourcedrain channel relatively large DC current (IDC), while the dynamic resistance was measured using a standard lock-in technique with small AC current. It was shown that the sample resistance is asymmetric with respect to the direction of DC current. The asymmetry increases with increase of magnetic field, DC current, and difference between n1 and n2. Results are interpreted in terms of a current-induced spin accumulation or depletion near the slot, as described by a spin drift-diffusion equation. The effect on the sample resistance is due to the positive magnetoresistance of Si-MOSFETs in parallel magnetic fields.

Original languageEnglish
Title of host publicationMagnetism and Magnetic Materials V
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)9783037854365
StatePublished - 2012
Event5th Moscow International Symposium on Magnetism, MISM 2011 - Moscow, Russian Federation
Duration: 21 Aug 201125 Aug 2011

Publication series

NameSolid State Phenomena
ISSN (Print)1012-0394


Conference5th Moscow International Symposium on Magnetism, MISM 2011
Country/TerritoryRussian Federation


  • Magnetoresistance
  • Spin injection
  • Two-dimensional conductivity


Dive into the research topics of 'Current induced spin injection in Si-MOSFET'. Together they form a unique fingerprint.

Cite this