Current-induced nonuniform enhancement of sheet resistance in A r+ -irradiated SrTi O3

Debangsu Roy; Yiftach Frenkel; Sagi Davidovitch; Eylon Persky; Noam Haham; Marc Gabay; Beena Kalisky; Lior Klein

doi:10.1103/PhysRevB.95.245303

Current-induced nonuniform enhancement of sheet resistance in A r+ -irradiated SrTi O3

Debangsu Roy
, Yiftach Frenkel
, Sagi Davidovitch
, Eylon Persky
, Noam Haham
, Marc Gabay
, Beena Kalisky
, Lior Klein

Department of Physics - at Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The sheet resistance Rs of Ar+ irradiated SrTiO3 in patterns with a length scale of several microns increases significantly below ∼40 K in connection with driving currents exceeding a certain threshold. The initial lower Rs is recovered upon warming with accelerated recovery around 70 and 160 K. Scanning superconducting quantum interference device microscopy shows local irreversible changes in the spatial distribution of the current with a length scale of several microns. We attribute the observed nonuniform enhancement of Rs to the attraction of the charged single-oxygen and dioxygen vacancies by the crystallographic domain boundaries in SrTiO3. The boundaries, which are nearly ferroelectric below 40 K, are polarized by the local electrical field associated with the driven current and the clustered vacancies which suppress conductivity in their vicinity and yield a noticeable enhancement in the device resistance when the current path width is on the order of the boundary extension. The temperatures of accelerated conductivity recovery are associated with the energy barriers for the diffusion of the two types of vacancies.

Original language	English
Article number	245303
Journal	Physical Review B
Volume	95
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.95.245303
State	Published - 5 Jun 2017

Bibliographical note

Publisher Copyright:
© 2017 American Physical Society.

Funding

L.K. acknowledges support by the U.S.-Israel Binational Science Foundation (2012169) and by the Israel Science Foundation founded by the Israel Academy of Sciences and Humanities (533/15). Y.F., E.P., N.H., and B.K. were supported by the European Research Council Grant No. ERC-2014-STG-639792, and Israel Science Foundation Grant No. ISF-1102/13. Support from the French National Research Agency (ANR), Project LACUNES No. ANR-13-BS04-0006-01 and from the Institut Universitaire de France are gratefully acknowledged (M.G.).

Funders	Funder number
Horizon 2020 Framework Programme	639792
European Commission	ISF-1102/13
Agence Nationale de la Recherche	ANR-13-BS04-0006-01
United States-Israel Binational Science Foundation	2012169
Israel Academy of Sciences and Humanities	533/15
Israel Science Foundation
Institut universitaire de France

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10.1103/PhysRevB.95.245303

Cite this

@article{635017c06bb046fdaab7cb28dc5023ce,

title = "Current-induced nonuniform enhancement of sheet resistance in A r+ -irradiated SrTi O3",

abstract = "The sheet resistance Rs of Ar+ irradiated SrTiO3 in patterns with a length scale of several microns increases significantly below ∼40 K in connection with driving currents exceeding a certain threshold. The initial lower Rs is recovered upon warming with accelerated recovery around 70 and 160 K. Scanning superconducting quantum interference device microscopy shows local irreversible changes in the spatial distribution of the current with a length scale of several microns. We attribute the observed nonuniform enhancement of Rs to the attraction of the charged single-oxygen and dioxygen vacancies by the crystallographic domain boundaries in SrTiO3. The boundaries, which are nearly ferroelectric below 40 K, are polarized by the local electrical field associated with the driven current and the clustered vacancies which suppress conductivity in their vicinity and yield a noticeable enhancement in the device resistance when the current path width is on the order of the boundary extension. The temperatures of accelerated conductivity recovery are associated with the energy barriers for the diffusion of the two types of vacancies.",

author = "Debangsu Roy and Yiftach Frenkel and Sagi Davidovitch and Eylon Persky and Noam Haham and Marc Gabay and Beena Kalisky and Lior Klein",

note = "Publisher Copyright: {\textcopyright} 2017 American Physical Society.",

year = "2017",

month = jun,

day = "5",

doi = "10.1103/PhysRevB.95.245303",

language = "אנגלית",

volume = "95",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "24",

}

TY - JOUR

T1 - Current-induced nonuniform enhancement of sheet resistance in A r+ -irradiated SrTi O3

AU - Roy, Debangsu

AU - Frenkel, Yiftach

AU - Davidovitch, Sagi

AU - Persky, Eylon

AU - Haham, Noam

AU - Gabay, Marc

AU - Kalisky, Beena

AU - Klein, Lior

PY - 2017/6/5

Y1 - 2017/6/5

N2 - The sheet resistance Rs of Ar+ irradiated SrTiO3 in patterns with a length scale of several microns increases significantly below ∼40 K in connection with driving currents exceeding a certain threshold. The initial lower Rs is recovered upon warming with accelerated recovery around 70 and 160 K. Scanning superconducting quantum interference device microscopy shows local irreversible changes in the spatial distribution of the current with a length scale of several microns. We attribute the observed nonuniform enhancement of Rs to the attraction of the charged single-oxygen and dioxygen vacancies by the crystallographic domain boundaries in SrTiO3. The boundaries, which are nearly ferroelectric below 40 K, are polarized by the local electrical field associated with the driven current and the clustered vacancies which suppress conductivity in their vicinity and yield a noticeable enhancement in the device resistance when the current path width is on the order of the boundary extension. The temperatures of accelerated conductivity recovery are associated with the energy barriers for the diffusion of the two types of vacancies.

AB - The sheet resistance Rs of Ar+ irradiated SrTiO3 in patterns with a length scale of several microns increases significantly below ∼40 K in connection with driving currents exceeding a certain threshold. The initial lower Rs is recovered upon warming with accelerated recovery around 70 and 160 K. Scanning superconducting quantum interference device microscopy shows local irreversible changes in the spatial distribution of the current with a length scale of several microns. We attribute the observed nonuniform enhancement of Rs to the attraction of the charged single-oxygen and dioxygen vacancies by the crystallographic domain boundaries in SrTiO3. The boundaries, which are nearly ferroelectric below 40 K, are polarized by the local electrical field associated with the driven current and the clustered vacancies which suppress conductivity in their vicinity and yield a noticeable enhancement in the device resistance when the current path width is on the order of the boundary extension. The temperatures of accelerated conductivity recovery are associated with the energy barriers for the diffusion of the two types of vacancies.

UR - https://www.scopus.com/pages/publications/85023186875

U2 - 10.1103/PhysRevB.95.245303

DO - 10.1103/PhysRevB.95.245303

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

SN - 2469-9950

VL - 95

JO - Physical Review B

JF - Physical Review B

IS - 24

M1 - 245303

ER -

Current-induced nonuniform enhancement of sheet resistance in A r+ -irradiated SrTi O3

Abstract

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