CuInS//2, CuInSe//2 AND CuIn//5S//8 LAYERS PREPARED BY ELECTRODEPOSITION.

G. Hodes; T. Engelhard; D. Cahen; L. L. Kazmerski; C. R. Herrington

CuInS//2, CuInSe//2 AND CuIn//5S//8 LAYERS PREPARED BY ELECTRODEPOSITION.

G. Hodes
, T. Engelhard
, D. Cahen
, L. L. Kazmerski
, C. R. Herrington

Weizmann Institute of Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

CuInS//2, CuIn//5S//8 and CuInSe//2 films were prepared by deposition of Cu-In-S or Cu-In from aqueous baths, followed by annealing in H//2S or H//2Se. A correlation was found between the composition of CuInS//2 layers (and, to some extent, the annealing temperature) and their conductivity type. The morphology of the layers was the most important factor in determining their photovoltaic activity, which was measured in a liquid (polysulphide) junction configuration. The CuInS//2 layers were usually of the chalcopyrite structure while the CuIn//5S//8 layers were spinel, measured by X-ray diffraction. The n-type layers of all three semiconductors showed very variable quantum efficiencies up to 0. 67 for CuInS//2, while the p-CuInS//2 layers gave quantum efficiencies which rarely exceeded 0. 1.

Original language	English
Title of host publication	Commission of the European Communities, (Report) EUR
Editors	Wolfgang Palz, F.C. Trebble
Publisher	D. Reidel Publ Co
Pages	846-849
Number of pages	4
ISBN (Print)	9027721041
State	Published - 1985
Externally published	Yes

Publication series

Name	Commission of the European Communities, (Report) EUR

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Cite this

@inproceedings{4be6246cbd844722bba6cf1c18e12e54,

title = "CuInS//2, CuInSe//2 AND CuIn//5S//8 LAYERS PREPARED BY ELECTRODEPOSITION.",

abstract = "CuInS//2, CuIn//5S//8 and CuInSe//2 films were prepared by deposition of Cu-In-S or Cu-In from aqueous baths, followed by annealing in H//2S or H//2Se. A correlation was found between the composition of CuInS//2 layers (and, to some extent, the annealing temperature) and their conductivity type. The morphology of the layers was the most important factor in determining their photovoltaic activity, which was measured in a liquid (polysulphide) junction configuration. The CuInS//2 layers were usually of the chalcopyrite structure while the CuIn//5S//8 layers were spinel, measured by X-ray diffraction. The n-type layers of all three semiconductors showed very variable quantum efficiencies up to 0. 67 for CuInS//2, while the p-CuInS//2 layers gave quantum efficiencies which rarely exceeded 0. 1.",

author = "G. Hodes and T. Engelhard and D. Cahen and Kazmerski, \{L. L.\} and Herrington, \{C. R.\}",

year = "1985",

language = "אנגלית",

isbn = "9027721041",

series = "Commission of the European Communities, (Report) EUR",

publisher = "D. Reidel Publ Co",

pages = "846--849",

editor = "Wolfgang Palz and F.C. Trebble",

booktitle = "Commission of the European Communities, (Report) EUR",

}

CuInS//2, CuInSe//2 AND CuIn//5S//8 LAYERS PREPARED BY ELECTRODEPOSITION. / Hodes, G.; Engelhard, T.; Cahen, D. et al.
Commission of the European Communities, (Report) EUR. ed. / Wolfgang Palz; F.C. Trebble. D. Reidel Publ Co, 1985. p. 846-849 (Commission of the European Communities, (Report) EUR).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - CuInS//2, CuInSe//2 AND CuIn//5S//8 LAYERS PREPARED BY ELECTRODEPOSITION.

AU - Hodes, G.

AU - Engelhard, T.

AU - Cahen, D.

AU - Kazmerski, L. L.

AU - Herrington, C. R.

PY - 1985

Y1 - 1985

N2 - CuInS//2, CuIn//5S//8 and CuInSe//2 films were prepared by deposition of Cu-In-S or Cu-In from aqueous baths, followed by annealing in H//2S or H//2Se. A correlation was found between the composition of CuInS//2 layers (and, to some extent, the annealing temperature) and their conductivity type. The morphology of the layers was the most important factor in determining their photovoltaic activity, which was measured in a liquid (polysulphide) junction configuration. The CuInS//2 layers were usually of the chalcopyrite structure while the CuIn//5S//8 layers were spinel, measured by X-ray diffraction. The n-type layers of all three semiconductors showed very variable quantum efficiencies up to 0. 67 for CuInS//2, while the p-CuInS//2 layers gave quantum efficiencies which rarely exceeded 0. 1.

AB - CuInS//2, CuIn//5S//8 and CuInSe//2 films were prepared by deposition of Cu-In-S or Cu-In from aqueous baths, followed by annealing in H//2S or H//2Se. A correlation was found between the composition of CuInS//2 layers (and, to some extent, the annealing temperature) and their conductivity type. The morphology of the layers was the most important factor in determining their photovoltaic activity, which was measured in a liquid (polysulphide) junction configuration. The CuInS//2 layers were usually of the chalcopyrite structure while the CuIn//5S//8 layers were spinel, measured by X-ray diffraction. The n-type layers of all three semiconductors showed very variable quantum efficiencies up to 0. 67 for CuInS//2, while the p-CuInS//2 layers gave quantum efficiencies which rarely exceeded 0. 1.

UR - https://www.scopus.com/pages/publications/0022194754

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:0022194754

SN - 9027721041

T3 - Commission of the European Communities, (Report) EUR

SP - 846

EP - 849

BT - Commission of the European Communities, (Report) EUR

A2 - Palz, Wolfgang

A2 - Trebble, F.C.

PB - D. Reidel Publ Co

ER -

CuInS//2, CuInSe//2 AND CuIn//5S//8 LAYERS PREPARED BY ELECTRODEPOSITION.

Abstract

Publication series

UN SDGs

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