Crystal growth of gallium nitride and manganese nitride using an high pressure thermal gradient process

F. Kelly, D. R. Gilbert, R. Chodelka, R. K. Singh, S. Pearton

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Standard, semiconductor-industry bulk crystal growth processes are virtually impossible for the production of GaN as this is prohibited by both the high melt temperature of GaN and thermal decomposition of the compound into Ga metal and diatomic nitrogen gas. In this study, a novel hydrostatic pressure system was employed to grow GaN crystals in a very high pressure ambient. The ultra-high pressure, high temperature process uses a solid-phase nitrogen source to form GaN crystals in a metal alloy melt. Using a thermal gradient diffusion process, in which nitrogen dissolves in the high temperature region of the metal melt and diffuses to the lower temperature, lower solubility region, high quality crystals up to ∼0.5 mm in size were formed, as determined by scanning electron microscopy, X-ray diffraction, and micro-Raman analysis.

Original languageEnglish
Pages (from-to)1027-1030
Number of pages4
JournalSolid-State Electronics
Issue number6
StatePublished - Jun 2003
Externally publishedYes


We would like to acknowledge the valuable assistance of S. MacDonald of the University of Florida for the acquisition of micro-Raman spectral data and J. Budai at Oak Ridge National Laboratory, Oak Ridge, TN for acquisition of XRD data. We would also like to thank Dr. R. Abbaschian of the University of Florida, and Drs. A. Novikov and N. Patrin of the Gemesis Corporation for all of their technical expertise in high pressure systems. Working in collaboration with the University of Florida, The Gemesis Corporation conducted its work under SBIR grant no. N00014-99-M-0151, which was monitored by Colin Wood of the Office of Naval Research.

FundersFunder number
Small Business Innovation Research
University of Florida


    Dive into the research topics of 'Crystal growth of gallium nitride and manganese nitride using an high pressure thermal gradient process'. Together they form a unique fingerprint.

    Cite this