Abstract
It is shown that the role of valley degeneracy is essential in enhancing the Hartree interaction terms over the exchange terms and thereby causing different critical transport properties in doped semiconductors. We predict, following the arguments of M. Kaveth, that for uncompensated many-valley semiconductors, the critical conductivity exponent is v equals one-half and the critical exponent for the dielectric constant is 2v equals 1.
| Original language | English |
|---|---|
| Pages (from-to) | 1-8 |
| Number of pages | 8 |
| Journal | Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties |
| Volume | 55 |
| Issue number | 1 |
| State | Published - Jan 1987 |