Abstract
We review the recent developments regarding critical phenomena near the metal-insulator transition. A discussion is presented of the experimental evidence for the effect on the transition due to localization and electron interaction. The critical phenomena fall into two classes. A theoretical explanation of these phenomena and their classification is presented and additional experiments are suggested.
| Original language | English |
|---|---|
| Title of host publication | Disord Semicond |
| Publisher | Plenum Press |
| ISBN (Print) | 0306424940, 9780306424946 |
| DOIs | |
| State | Published - 1987 |