Abstract
Critical current density measurements have been made on in-situ processed and patterned, laser deposited thin films. These films were deposited on LaAlO3 and KTaO3 with substrate temperatures ranging at from 500-650°C. Epitaxial growth was achieved as targets of Y (123) and Y (123) Ag3 were ablated by an excimer laser in an oxygen ambient atmosphere. A steel mask was placed near the substrate to pattern the films. Transport critical current density was measured as a function of temperature in order to ascertain any role flux pinning may play in determining critical current density.
Original language | English |
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Pages (from-to) | 69-76 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 1190 |
DOIs | |
State | Published - 23 Feb 1990 |
Externally published | Yes |
Funding
Part of this research is sponsored by National Science Foundation project No. MSM-8818994.
Funders | Funder number |
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National Science Foundation | MSM-8818994 |