Abstract
Oversize particles in CMP slurries are one of the most important causes of defectivity during chemical mechanical planarization (CMP) of dielectrics and metals. We have investigated the effect of pump induced particle agglomeration during the slurry handling process. The stress effects induced by positive displacement pumps and centrifugal pumps were investigated in the polishing of copper/low k dielectric materials. These studies were carried out by measuring the oversize particle distribution and the surface defectivity (scratches, etc) generated during the CMP polishing process. Good correlation between the pump induced agglomeration effects and defectivity in copper/low K polishing was established. The mechanisms for pump induced agglomeration and defect generation during copper, and low k dielectric polishing have been developed.
Original language | English |
---|---|
Pages | 354-357 |
Number of pages | 4 |
State | Published - 2007 |
Externally published | Yes |
Event | 12th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2007 - Fremont, CA, United States Duration: 6 Mar 2007 → 8 Mar 2007 |
Conference
Conference | 12th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2007 |
---|---|
Country/Territory | United States |
City | Fremont, CA |
Period | 6/03/07 → 8/03/07 |