Correlation between electrical transport, microstructure and room temperature ferromagnetism in 200 keV Ni 2+ ion implanted zinc oxide (ZnO) thin films

B. Joshi; S. Ghosh; P. Srivastava; P. Kumar; D. Kanjilal

doi:10.1007/s00339-012-6785-x

Correlation between electrical transport, microstructure and room temperature ferromagnetism in 200 keV Ni ²⁺ ion implanted zinc oxide (ZnO) thin films

B. Joshi, S. Ghosh, P. Srivastava, P. Kumar, D. Kanjilal

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report variable temperature resistivity measurements and mechanisms related to electrical conduction in 200 keV Ni ²⁺ ion implanted ZnO thin films deposited by vapor phase transport. The dc electrical resistivity versus temperature curves show that all polycrystalline ZnO films are semiconducting in nature. In the room temperature range they exhibit band conduction and conduction due to thermionic emission of electrons from grain boundaries present in the polycrystalline films. In the low temperature range, nearest neighbor hopping (NNH) and variable range hopping (VRH) conduction are observed. The detailed conduction mechanism of these films and the effects of grain boundary (GB) barriers on the electrical conduction process are discussed. An attempt is made to correlate electrical conduction behavior and previously observed room temperature ferromagnetism of these films.

Original language	English
Pages (from-to)	393-400
Number of pages	8
Journal	Applied Physics A: Materials Science and Processing
Volume	107
Issue number	2
DOIs	https://doi.org/10.1007/s00339-012-6785-x
State	Published - May 2012
Externally published	Yes

Bibliographical note

Funding Information:
We are thankful to Dr. Neeraj Khare, IIT Delhi for various important discussions. One of the authors (B. Joshi) gratefully acknowledges the financial support from Department of Science and Technology (DST) and University Grants Commission (UGC), New Delhi.

Funding

We are thankful to Dr. Neeraj Khare, IIT Delhi for various important discussions. One of the authors (B. Joshi) gratefully acknowledges the financial support from Department of Science and Technology (DST) and University Grants Commission (UGC), New Delhi.

Funders	Funder number
Department of Science and Technology, Ministry of Science and Technology, India
University Grants Commission

Access to Document

10.1007/s00339-012-6785-x

Cite this

@article{aa6ad3482a4644e5aad0649d70445d32,

title = "Correlation between electrical transport, microstructure and room temperature ferromagnetism in 200 keV Ni 2+ ion implanted zinc oxide (ZnO) thin films",

abstract = "We report variable temperature resistivity measurements and mechanisms related to electrical conduction in 200 keV Ni 2+ ion implanted ZnO thin films deposited by vapor phase transport. The dc electrical resistivity versus temperature curves show that all polycrystalline ZnO films are semiconducting in nature. In the room temperature range they exhibit band conduction and conduction due to thermionic emission of electrons from grain boundaries present in the polycrystalline films. In the low temperature range, nearest neighbor hopping (NNH) and variable range hopping (VRH) conduction are observed. The detailed conduction mechanism of these films and the effects of grain boundary (GB) barriers on the electrical conduction process are discussed. An attempt is made to correlate electrical conduction behavior and previously observed room temperature ferromagnetism of these films.",

author = "B. Joshi and S. Ghosh and P. Srivastava and P. Kumar and D. Kanjilal",

note = "Funding Information: We are thankful to Dr. Neeraj Khare, IIT Delhi for various important discussions. One of the authors (B. Joshi) gratefully acknowledges the financial support from Department of Science and Technology (DST) and University Grants Commission (UGC), New Delhi.",

year = "2012",

month = may,

doi = "10.1007/s00339-012-6785-x",

language = "אנגלית",

volume = "107",

pages = "393--400",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "2",

}

TY - JOUR

T1 - Correlation between electrical transport, microstructure and room temperature ferromagnetism in 200 keV Ni 2+ ion implanted zinc oxide (ZnO) thin films

AU - Joshi, B.

AU - Ghosh, S.

AU - Srivastava, P.

AU - Kumar, P.

AU - Kanjilal, D.

N1 - Funding Information: We are thankful to Dr. Neeraj Khare, IIT Delhi for various important discussions. One of the authors (B. Joshi) gratefully acknowledges the financial support from Department of Science and Technology (DST) and University Grants Commission (UGC), New Delhi.

PY - 2012/5

Y1 - 2012/5

N2 - We report variable temperature resistivity measurements and mechanisms related to electrical conduction in 200 keV Ni 2+ ion implanted ZnO thin films deposited by vapor phase transport. The dc electrical resistivity versus temperature curves show that all polycrystalline ZnO films are semiconducting in nature. In the room temperature range they exhibit band conduction and conduction due to thermionic emission of electrons from grain boundaries present in the polycrystalline films. In the low temperature range, nearest neighbor hopping (NNH) and variable range hopping (VRH) conduction are observed. The detailed conduction mechanism of these films and the effects of grain boundary (GB) barriers on the electrical conduction process are discussed. An attempt is made to correlate electrical conduction behavior and previously observed room temperature ferromagnetism of these films.

AB - We report variable temperature resistivity measurements and mechanisms related to electrical conduction in 200 keV Ni 2+ ion implanted ZnO thin films deposited by vapor phase transport. The dc electrical resistivity versus temperature curves show that all polycrystalline ZnO films are semiconducting in nature. In the room temperature range they exhibit band conduction and conduction due to thermionic emission of electrons from grain boundaries present in the polycrystalline films. In the low temperature range, nearest neighbor hopping (NNH) and variable range hopping (VRH) conduction are observed. The detailed conduction mechanism of these films and the effects of grain boundary (GB) barriers on the electrical conduction process are discussed. An attempt is made to correlate electrical conduction behavior and previously observed room temperature ferromagnetism of these films.

UR - http://www.scopus.com/inward/record.url?scp=84861572382&partnerID=8YFLogxK

U2 - 10.1007/s00339-012-6785-x

DO - 10.1007/s00339-012-6785-x

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84861572382

SN - 0947-8396

VL - 107

SP - 393

EP - 400

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 2

ER -