Controlling space charge of oxide-free si by in situ modification of dipolar alkyl monolayers

Keyphrases

• Alkyl 100%
• Oxide-free 100%
• Si Surface 100%
• Space Charge 100%
• In Situ Modification 100%
• Tunneling 66%
• Attenuation 33%
• Dipole Moment 33%
• Passivation 33%
• Charge Transport 33%
• C-C Bond 33%
• Surface Potential 33%
• Surface Passivation 33%
• Molecular Junctions 33%
• Tunneling Barrier 33%
• N-Si 33%
• Detailed numerical Simulation 33%
• In-situ Reaction 33%
• Negligible Effects 33%
• Schottky Barrier Height 33%
• Reactive Sites 33%
• Interface States 33%
• Fermi Level pinning 33%
• Two-step Procedure 33%
• Molecular Monolayer 33%
• Conflicting Requirements 33%

Physics

• Oxide 100%
• Space Charge 100%
• Dipole Moment 33%
• Transportation 33%
• Schottky Barrier Height 33%
• Charge Transfer 33%
• Numerical Simulation 33%
• Interface State 33%

Material Science

• Monolayers 100%
• Oxide Compound 100%
• Schottky Barrier 25%
• Surface Passivation 25%