TY - JOUR
T1 - Controlled synthesis of ferromagnetic semiconducting silicon nanotubes
AU - Shpaisman, Nava
AU - Givan, Uri
AU - Kwiat, Moria
AU - Pevzner, Alexander
AU - Elnathan, Roey
AU - Patolsky, Fernando
PY - 2012/4/12
Y1 - 2012/4/12
N2 - Recently, transition-metal-doped semiconductor nanostructures, so-called diluted magnetic semiconductors, such as dots, rods, wires, and films, have been the subject of intense research efforts due to their fascinating properties and potential applications in bioimaging, spintronics, and quantum interference information processing. Here, we present a method for synthesizing superdiluted Ni-doped ferromagnetic silicon nanotubes (SiNTs) (with room-temperature ferromagnetism), with minimal synthetic steps and with maximal control of the resultant SiNTs structure and composition. The unique advantage of our approach is the simplicity that provides us precise control of the ferromagnetic SiNT parameters, length, outer and inner diameter, wall thickness, Ni concentration, and crystallinity, by changing the template membrane (pore diameter), dipping time in the catalyst, growth time, and decomposition temperature. Numerous combinations of SiNT parameters can therefore be prepared that can influence their magnetic and electronic properties. This level of control can lead to novel future nanoelectronic and nanospintronic devices.
AB - Recently, transition-metal-doped semiconductor nanostructures, so-called diluted magnetic semiconductors, such as dots, rods, wires, and films, have been the subject of intense research efforts due to their fascinating properties and potential applications in bioimaging, spintronics, and quantum interference information processing. Here, we present a method for synthesizing superdiluted Ni-doped ferromagnetic silicon nanotubes (SiNTs) (with room-temperature ferromagnetism), with minimal synthetic steps and with maximal control of the resultant SiNTs structure and composition. The unique advantage of our approach is the simplicity that provides us precise control of the ferromagnetic SiNT parameters, length, outer and inner diameter, wall thickness, Ni concentration, and crystallinity, by changing the template membrane (pore diameter), dipping time in the catalyst, growth time, and decomposition temperature. Numerous combinations of SiNT parameters can therefore be prepared that can influence their magnetic and electronic properties. This level of control can lead to novel future nanoelectronic and nanospintronic devices.
UR - http://www.scopus.com/inward/record.url?scp=84859771565&partnerID=8YFLogxK
U2 - 10.1021/jp2037944
DO - 10.1021/jp2037944
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AN - SCOPUS:84859771565
SN - 1932-7447
VL - 116
SP - 8000
EP - 8007
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 14
ER -