A semiconductor that contains dopants can be considered as a mixed electronic-ionic conductor, with the dopants as mobile ions. The temperature range in which this normally becomes true is far from where the opto-electronic properties of the material are of interest. However, exceptions exist. In this chapter we consider several important cases. Dopant diffusion and drift are relevant not only for materials such as Si:Li, used in radiation detectors, but also for other semiconductors, ranging from II-VIs and related compounds, such as CdTe, (Hg,Cd)Te and CuInSe2, to III-Vs, including GaN, and potential high temperature semiconductors, such as SiC. Better understanding of the phenomena is important also because of the implications that it has for device miniaturization, as dopant diffusion and drift put chemical limits to device stability. Such understanding can also make dopant electromigration useful for low-temperature doping.
|Number of pages||37|
|Journal||Defect and Diffusion Forum|
|State||Published - 2001|