Continuous and Time-Resolved Cathodoluminescence Studies of Electron Injection Induced Effects in Gallium Nitride

Sushrut Modak, Leonid Chernyak, Igor Lubomirsky, Sergey Khodorov

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

2 Scopus citations

Abstract

The purpose of this study is to experimentally determine the effect of electron injection on the minority carrier lifetime in Gallium Nitride. Earlier studies of electron injection in GaN have provided an indirect proof of lifetime enhancement through the increase of minority carrier diffusion length and the decrease in the cathodoluminescence intensity. These changes in the minority transport properties, caused by electron injection, are brought forth through defect and trap levels in the bandgap. Furthermore, a thorough discussion of the electron injection model and role of these trap levels is presented.

Original languageEnglish
Title of host publicationNATO Science for Peace and Security Series B
Subtitle of host publicationPhysics and Biophysics
PublisherSpringer
Pages109-117
Number of pages9
DOIs
StatePublished - 2020
Externally publishedYes

Publication series

NameNATO Science for Peace and Security Series B: Physics and Biophysics
ISSN (Print)1874-6500
ISSN (Electronic)1874-6535

Bibliographical note

Publisher Copyright:
© 2020, Springer Nature B.V.

Funding

This work was supported in part by the NATO Science for Peace and security award G5453.

FundersFunder number
NATO Science for PeaceG5453

    Keywords

    • Electron injection
    • Gallium nitride
    • Lifetime
    • Minority carrier transport

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