Abstract
The purpose of this study is to experimentally determine the effect of electron injection on the minority carrier lifetime in Gallium Nitride. Earlier studies of electron injection in GaN have provided an indirect proof of lifetime enhancement through the increase of minority carrier diffusion length and the decrease in the cathodoluminescence intensity. These changes in the minority transport properties, caused by electron injection, are brought forth through defect and trap levels in the bandgap. Furthermore, a thorough discussion of the electron injection model and role of these trap levels is presented.
Original language | English |
---|---|
Title of host publication | NATO Science for Peace and Security Series B |
Subtitle of host publication | Physics and Biophysics |
Publisher | Springer |
Pages | 109-117 |
Number of pages | 9 |
DOIs | |
State | Published - 2020 |
Externally published | Yes |
Publication series
Name | NATO Science for Peace and Security Series B: Physics and Biophysics |
---|---|
ISSN (Print) | 1874-6500 |
ISSN (Electronic) | 1874-6535 |
Bibliographical note
Publisher Copyright:© 2020, Springer Nature B.V.
Funding
This work was supported in part by the NATO Science for Peace and security award G5453.
Funders | Funder number |
---|---|
NATO Science for Peace | G5453 |
Keywords
- Electron injection
- Gallium nitride
- Lifetime
- Minority carrier transport