Configurable Multi-Port Dynamic Bitcell with Internal Refresh Mechanism

Roman Golman, Robert Giterman, Adam Teman

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Embedded memories occupy an increasingly dominant part of the area and power budgets of modern SoCs. Multi-ported embedded memories, commonly used by media SoCs and graphical processing units, occupy even more area and consume higher power due to larger memory bitcells. Gain-cell eDRAM is a high-density alternative for two-ported operation with a small silicon footprint. However, conventional gain-cell memories have limited data availability, as they require periodic refresh operations to maintain their data. In this paper, we propose a novel 4-transistor gain-cell, which provides up-to two independent read and write ports (2R2W), with a configurable mode of operation, supporting a hidden refresh mechanism for improved memory availability. An 8 kbit memory macro was implemented in a 28 nm FD-SOI technology, offering up-to 3 × reduction in bitcell area compared to other dual-ported SRAM memory options, and 100% memory availability, as opposed to conventional dynamic memories.

Original languageEnglish
Title of host publication2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages589-592
Number of pages4
ISBN (Electronic)9781538695623
DOIs
StatePublished - 2 Jul 2018
Event25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018 - Bordeaux, France
Duration: 9 Dec 201812 Dec 2018

Publication series

Name2018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018

Conference

Conference25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018
Country/TerritoryFrance
CityBordeaux
Period9/12/1812/12/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

  • 1R1W
  • 2R2W
  • GC-eDRAM
  • configurable memory
  • dual-port
  • refresh
  • two-port

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