Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

I. Shlimak; D. I. Golosov; A. Butenko; K. J. Friedland; S. V. Kravchenko

doi:10.1002/andp.200910400

Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

I. Shlimak, D. I. Golosov, A. Butenko, K. J. Friedland, S. V. Kravchenko

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_1,2 across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot.

Original language	English
Pages (from-to)	913-917
Number of pages	5
Journal	Annalen der Physik
Volume	18
Issue number	12
DOIs	https://doi.org/10.1002/andp.200910400
State	Published - Dec 2010

Keywords

Si-MOSFET
Spin accumulation
Two-dimensional conductivity

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10.1002/andp.200910400

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abstract = "We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n1,2 across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot.",

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AU - Shlimak, I.

AU - Golosov, D. I.

AU - Butenko, A.

AU - Friedland, K. J.

AU - Kravchenko, S. V.

PY - 2010/12

Y1 - 2010/12

N2 - We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n1,2 across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot.

AB - We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n1,2 across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot.

KW - Si-MOSFET

KW - Spin accumulation

KW - Two-dimensional conductivity

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Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

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Keywords

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