Complex metrology on 3D structures using multi-channel OCD

Taher Kagalwala, Sridhar Mahendrakar, Alok Vaid, Paul K. Isbester, Aron Cepler, Charles Kang, Naren Yellai, Matthew Sendelbach, Mihael Ko, Ovadia Ilgayev, Yinon Katz, Lilach Tamam, Ilya Osherov

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Device scaling has not only driven the use of measurements on more complex structures, in terms of geometry, materials, and tighter ground rules, but also the need to move away from non-patterned measurement sites to patterned ones. This is especially of concern for very thin film layers that have a high thickness dependence on structure geometry or wafer pattern factor. Although 2-dimensional (2D) sites are often found to be sufficient for process monitoring and control of very thin films, sometimes 3D sites are required to further simulate structures within the device. The measurement of film thicknesses only a few atoms thick on complex 3D sites, however, are very challenging. Apart from measuring thin films on 3D sites, there is also a critical need to measure parameters on 3D sites, which are weak and less sensitive for OCD (Optical Critical Dimension) metrology, with high accuracy and precision. Thus, state-ofthe-art methods are needed to address such metrology challenges. This work introduces the concept of Enhanced OCD which uses various methods to improve the sensitivity and reduce correlations for weak parameters in a complex measurement. This work also describes how more channels of information, when used correctly, can improve the precision and accuracy of weak, non-sensitive or complex parameters of interest.

Original languageEnglish
Title of host publicationMetrology, Inspection, and Process Control for Microlithography XXXI
EditorsVladimir A. Ukraintsev, Martha I. Sanchez
PublisherSPIE
ISBN (Electronic)9781510607415
DOIs
StatePublished - 2017
Externally publishedYes
Event31st Conference on Metrology, Inspection, and Process Control for Microlithography 2017 - San Jose, United States
Duration: 27 Feb 20172 Mar 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10145
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference31st Conference on Metrology, Inspection, and Process Control for Microlithography 2017
Country/TerritoryUnited States
CitySan Jose
Period27/02/172/03/17

Bibliographical note

Publisher Copyright:
© 2017 SPIE.

Keywords

  • 3D
  • Enhanced OCD
  • High-K
  • OCD
  • Proximity
  • Scatterometry
  • TMU
  • XPS

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