Comparison of plasma chemistries for dry etching of Ta2O5

K. P. Lee; K. B. Jung; R. K. Singh; S. J. Pearton; C. Hobbs; P. Tobin

doi:10.1116/1.582319

Comparison of plasma chemistries for dry etching of Ta₂O₅

K. P. Lee, K. B. Jung, R. K. Singh, S. J. Pearton, C. Hobbs, P. Tobin

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

A number of different plasma chemistries were examined for dry etching of Ta₂O₅ under inductively coupled plasma (ICP) conditions. The maximum etch rates were achieved with SF₆- or Cl₂-based chemistries, while the rates with CH₄/H₂/Ar or N₂/Ar were at least an order of magnitude lower. Under practical etching conditions, the etch rates for Si were always lower than those for Ta₂O₅.

Original language	English
Pages (from-to)	1169-1172
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	4 I
DOIs	https://doi.org/10.1116/1.582319
State	Published - Jul 2000
Externally published	Yes
Event	46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: 25 Oct 1999 → 29 Oct 1999

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abstract = "A number of different plasma chemistries were examined for dry etching of Ta2O5 under inductively coupled plasma (ICP) conditions. The maximum etch rates were achieved with SF6- or Cl2-based chemistries, while the rates with CH4/H2/Ar or N2/Ar were at least an order of magnitude lower. Under practical etching conditions, the etch rates for Si were always lower than those for Ta2O5.",

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AU - Jung, K. B.

AU - Singh, R. K.

AU - Pearton, S. J.

AU - Hobbs, C.

AU - Tobin, P.

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AB - A number of different plasma chemistries were examined for dry etching of Ta2O5 under inductively coupled plasma (ICP) conditions. The maximum etch rates were achieved with SF6- or Cl2-based chemistries, while the rates with CH4/H2/Ar or N2/Ar were at least an order of magnitude lower. Under practical etching conditions, the etch rates for Si were always lower than those for Ta2O5.

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Y2 - 25 October 1999 through 29 October 1999

ER -

Comparison of plasma chemistries for dry etching of Ta₂O₅

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