Comparative performance analysis of nanowire and nanotube field effect transistors

Raj Kumar, Shashi Bala, Arvind Kumar

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

Original languageEnglish
Title of host publicationInnovative Applications of Nanowires for Circuit Design
PublisherIGI Global
Pages54-70
Number of pages17
ISBN (Electronic)9781799864691
ISBN (Print)9781799864677
DOIs
StatePublished - 20 Nov 2020
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2021, IGI Global.

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