Comparative performance analysis of Carbon Nanotube and Si-Nanotube based Field effect Transistors

Raj Kumar, Shashi Bala, Arvind Kumar

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


The continuous scaling of scaling of conventional planar transistors has migrated to nanoscale regime to achieve better performance of the device by mainstream semiconductor industry. To suppress the short channel effects arises in nanoscale devices, many 3D devices and materials have been proposed and investigated. Carbon Nanotube can be used as best materials for replacement of channel material MOSFET transistors due to its good electrical properties. Silicon nanotube field effect transistor is having two gates as an inner and outer gates, provides excellent electrostatic control and short channel effects immunity. In this paper, Carbon Nanotube Field Effect Transistor and Si- Nanotube field effect transistors have been designed and investigated. Performance of CNTFET and Si-NT MOSFET has been analysed and compared. These two field effect transistors may be considered for future of semiconductor industry.

Original languageEnglish
Article number012028
JournalIOP Conference Series: Materials Science and Engineering
Issue number1
StatePublished - 18 Jan 2021
Externally publishedYes
Event2020 International Conference on Integrated Interdisciplinary Innovations in Engineering, ICIIIE 2020 - Chandigarh, India
Duration: 28 Aug 202030 Aug 2020

Bibliographical note

Publisher Copyright:
© Published under licence by IOP Publishing Ltd.


  • Carbon nanotube
  • Si-nanotube
  • oxide thickness, IOFF
  • transistor


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