TY - JOUR
T1 - Colossal and tunable dielectric tunability in domain-engineered barium strontium titanate
AU - Chen, Dongfang
AU - Nisnevich, Sergey
AU - Wu, Liyan
AU - Gu, Zongquan
AU - Carroll, John
AU - Jiang, Yizhe
AU - Meyers, Cedric J.G.
AU - Coleman, Kathleen
AU - Hanrahan, Brendan M.
AU - Martin, Lane W.
AU - Grinberg, Ilya
AU - Spanier, Jonathan E.
N1 - Publisher Copyright:
© The Author(s) 2025.
PY - 2025/9/26
Y1 - 2025/9/26
N2 - Realization of tunable materials that are multifunctional and maintain high performance in dynamically changing environments is a fundamental goal of science and engineering. Tunable dielectrics form the basis of a wide variety of communication and sensing devices and require breakthrough performance improvement to enable next-generation technologies. Using phenomenological modeling, film growth, and characterization, we show that devices consisting of domain-wall-rich Ba0.8Sr0.2TiO3 films close to a polar-domain-variant phase boundary exhibit colossal dielectric tunability of 100:1 (99%) at a voltage (electric field) of ~15 V (750 kV/cm), resulting in a tunability-quality factor product figure of merit that rises to nearly 105, two orders of magnitude higher than the best previous reported values. Remarkably, varying the amplitude of alternating-current bias enables modulation of this tunability by 50%, owing to domain-wall motion. These results suggest that domain engineering is a powerful approach for achieving excellent modulation of functional properties in ferroelectric films.
AB - Realization of tunable materials that are multifunctional and maintain high performance in dynamically changing environments is a fundamental goal of science and engineering. Tunable dielectrics form the basis of a wide variety of communication and sensing devices and require breakthrough performance improvement to enable next-generation technologies. Using phenomenological modeling, film growth, and characterization, we show that devices consisting of domain-wall-rich Ba0.8Sr0.2TiO3 films close to a polar-domain-variant phase boundary exhibit colossal dielectric tunability of 100:1 (99%) at a voltage (electric field) of ~15 V (750 kV/cm), resulting in a tunability-quality factor product figure of merit that rises to nearly 105, two orders of magnitude higher than the best previous reported values. Remarkably, varying the amplitude of alternating-current bias enables modulation of this tunability by 50%, owing to domain-wall motion. These results suggest that domain engineering is a powerful approach for achieving excellent modulation of functional properties in ferroelectric films.
UR - https://www.scopus.com/pages/publications/105017388185
U2 - 10.1038/s41467-025-63449-4
DO - 10.1038/s41467-025-63449-4
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C2 - 41006300
AN - SCOPUS:105017388185
SN - 2041-1723
VL - 16
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 8486
ER -