COLLISIONAL IONIZATION AS THE ELECTRONIC MECHANISM FOR A SWITCHING EFFECT.

A. G. Zabrodskii; I. S. Shlimak

COLLISIONAL IONIZATION AS THE ELECTRONIC MECHANISM FOR A SWITCHING EFFECT.

A. G. Zabrodskii
, I. S. Shlimak

Department of Physics - at Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Switching effects in strongly doped compensated germanium have been studied. The experimental results show that it is due to a collisional ionization process. The method of kinetic equations is used to explore the most important features of the switching effect in terms of collisional ionization. Expressions are found for the basic parameters of the effect, and it is shown that they agree well with the experimental data both for strongly doped compensated semiconductors and for weakly doped semiconductors.

Original language	English
Pages (from-to)	1528-1531
Number of pages	4
Journal	Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela)
Volume	16
Issue number	8
State	Published - 1975

Cite this

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title = "COLLISIONAL IONIZATION AS THE ELECTRONIC MECHANISM FOR A SWITCHING EFFECT.",

abstract = "Switching effects in strongly doped compensated germanium have been studied. The experimental results show that it is due to a collisional ionization process. The method of kinetic equations is used to explore the most important features of the switching effect in terms of collisional ionization. Expressions are found for the basic parameters of the effect, and it is shown that they agree well with the experimental data both for strongly doped compensated semiconductors and for weakly doped semiconductors.",

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year = "1975",

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AU - Zabrodskii, A. G.

AU - Shlimak, I. S.

PY - 1975

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N2 - Switching effects in strongly doped compensated germanium have been studied. The experimental results show that it is due to a collisional ionization process. The method of kinetic equations is used to explore the most important features of the switching effect in terms of collisional ionization. Expressions are found for the basic parameters of the effect, and it is shown that they agree well with the experimental data both for strongly doped compensated semiconductors and for weakly doped semiconductors.

AB - Switching effects in strongly doped compensated germanium have been studied. The experimental results show that it is due to a collisional ionization process. The method of kinetic equations is used to explore the most important features of the switching effect in terms of collisional ionization. Expressions are found for the basic parameters of the effect, and it is shown that they agree well with the experimental data both for strongly doped compensated semiconductors and for weakly doped semiconductors.

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IS - 8

ER -

COLLISIONAL IONIZATION AS THE ELECTRONIC MECHANISM FOR A SWITCHING EFFECT.

Abstract

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