Cl2-based dry etching of doped manganate perovskites: PrBaCaMnO3 and LaSrMnO3

K. P. Lee; K. B. Jung; H. Cho; D. Kumar; S. V. Pietambaram; R. K. Singh; P. H. Hogan; K. H. Dahmen; Y. B. Hahn; S. J. Pearton

doi:10.1149/1.1392004

Cl₂-based dry etching of doped manganate perovskites: PrBaCaMnO₃ and LaSrMnO₃

K. P. Lee, K. B. Jung, H. Cho, D. Kumar, S. V. Pietambaram, R. K. Singh, P. H. Hogan, K. H. Dahmen, Y. B. Hahn, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Effective pattern transfer into PrBaCaMnO₃ and LaSrMnO₃ has been achieved using Cl₂/Ar discharges operated under inductively coupled plasma conditions. Etch rates up to 900 angstroms min^-1 for LaSrMnO₃ and 300 angstroms min^-1 for PrBaCaMnO₃ were obtained, with these rates being a strong function of ion flux, ion energy, and ion-to-neutral ratio. The etching is still physically dominated under all conditions, leading to significant surface smoothing on initially rough samples. Submicron (0.35 μm) features have been produced in both materials using SiN_x as the mask.

Original language	English
Pages (from-to)	2748-2751
Number of pages	4
Journal	Journal of the Electrochemical Society
Volume	146
Issue number	7
DOIs	https://doi.org/10.1149/1.1392004
State	Published - Jul 1999
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.1392004

Cite this

@article{23d6de3d316d463881cb2818fe136227,

title = "Cl2-based dry etching of doped manganate perovskites: PrBaCaMnO3 and LaSrMnO3",

abstract = "Effective pattern transfer into PrBaCaMnO3 and LaSrMnO3 has been achieved using Cl2/Ar discharges operated under inductively coupled plasma conditions. Etch rates up to 900 angstroms min-1 for LaSrMnO3 and 300 angstroms min-1 for PrBaCaMnO3 were obtained, with these rates being a strong function of ion flux, ion energy, and ion-to-neutral ratio. The etching is still physically dominated under all conditions, leading to significant surface smoothing on initially rough samples. Submicron (0.35 μm) features have been produced in both materials using SiNx as the mask.",

author = "Lee, {K. P.} and Jung, {K. B.} and H. Cho and D. Kumar and Pietambaram, {S. V.} and Singh, {R. K.} and Hogan, {P. H.} and Dahmen, {K. H.} and Hahn, {Y. B.} and Pearton, {S. J.}",

year = "1999",

month = jul,

doi = "10.1149/1.1392004",

language = "אנגלית",

volume = "146",

pages = "2748--2751",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Cl2-based dry etching of doped manganate perovskites

T2 - PrBaCaMnO3 and LaSrMnO3

AU - Lee, K. P.

AU - Jung, K. B.

AU - Cho, H.

AU - Kumar, D.

AU - Pietambaram, S. V.

AU - Singh, R. K.

AU - Hogan, P. H.

AU - Dahmen, K. H.

AU - Hahn, Y. B.

AU - Pearton, S. J.

PY - 1999/7

Y1 - 1999/7

N2 - Effective pattern transfer into PrBaCaMnO3 and LaSrMnO3 has been achieved using Cl2/Ar discharges operated under inductively coupled plasma conditions. Etch rates up to 900 angstroms min-1 for LaSrMnO3 and 300 angstroms min-1 for PrBaCaMnO3 were obtained, with these rates being a strong function of ion flux, ion energy, and ion-to-neutral ratio. The etching is still physically dominated under all conditions, leading to significant surface smoothing on initially rough samples. Submicron (0.35 μm) features have been produced in both materials using SiNx as the mask.

AB - Effective pattern transfer into PrBaCaMnO3 and LaSrMnO3 has been achieved using Cl2/Ar discharges operated under inductively coupled plasma conditions. Etch rates up to 900 angstroms min-1 for LaSrMnO3 and 300 angstroms min-1 for PrBaCaMnO3 were obtained, with these rates being a strong function of ion flux, ion energy, and ion-to-neutral ratio. The etching is still physically dominated under all conditions, leading to significant surface smoothing on initially rough samples. Submicron (0.35 μm) features have been produced in both materials using SiNx as the mask.

UR - http://www.scopus.com/inward/record.url?scp=0032662029&partnerID=8YFLogxK

U2 - 10.1149/1.1392004

DO - 10.1149/1.1392004

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0032662029

SN - 0013-4651

VL - 146

SP - 2748

EP - 2751

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 7

ER -

Cl₂-based dry etching of doped manganate perovskites: PrBaCaMnO₃ and LaSrMnO₃

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this