Class a power amplifier in 180 nm CMOS at C-band with integrated DC switch for efficient FMCW positioning radar

Jorg Carls, Frank Ellinger, Paulius Sakalas, Solon Spiegel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A two stage Class-A power amplifier optimized for FMCW positioning radar is presented. Fully integrated in 180 nm CMOS technology, the circuit features an integrated DC power supply switch for efficiency enhancements during the idle mode and RF isolation. The trade-offs for DC switch design and the corresponding speed implications are discussed. At a supply voltage of 2.4 V and a center frequency of 5.75 GHz, a RF gain of 12.5 dB, a 1 dB compression point of 17.3 dBm, and a RF isolation better than 28 dB at 3 dBm input power, are measured. Due to the DC switch a high drain efficiency of 16.2 % can be achieved over the full operation time of the positioning system.

Original languageEnglish
Title of host publication2008 17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008
StatePublished - 2008
Externally publishedYes
Event2008 17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008 - Wroclaw, Poland
Duration: 19 May 200821 May 2008

Publication series

Name2008 17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008

Conference

Conference2008 17th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2008
Country/TerritoryPoland
CityWroclaw
Period19/05/0821/05/08

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