Chloride inclusion and hole transport material doping to improve methyl ammonium lead bromide perovskite-based high open-circuit voltage solar cells

Low-cost solar cells with high V_OC, relatively small (E _G - qV_OC), and high qV_OC/E_G ratio, where E_G is the absorber band gap, are long sought after, especially for use in tandem cells or other systems with spectral splitting. We report a significant improvement in CH₃NH₃PbBr₃-based cells, using CH₃NH₃PbBr_3-xCl_x, with E_G = 2.3 eV, as the absorber in a mesoporous p-i-n device configuration. By p-doping an organic hole transport material with a deep HOMO level and wide band gap to reduce recombination, the cell's V_OC increased to 1.5 V, a 0.2 V increase from our earlier results with the pristine Br analogue with an identical band gap. At the same time, in the most efficient devices, the current density increased from ∼1 to ∼4 mA/cm².