Chirality Induced Spin Selectivity for Memory Applications

Rahamim Guliamov, Shinto Mathew, Kiran Vankayala, Hagay Moshe, Yitzhak Mastai, Ron Naaman

Research output: Contribution to journalArticlepeer-review


Creation and manipulation of spin current is one of major aspects of memory devices. In conventional devices spin-polarized current is created by permanent magnetic layer. Further miniaturization of the memory is limited by super-paramagnetic
behavior of layer. Hence, high density memory requires out-of-plane geometry with
perpendicular magnetic anisotropy. Achieving this goal with inorganic magnetic
layers is a challenge. We present a new approach in which the permanent magnetic layer has been replaced with inorganic chiral film producing spin polarized
current due to Chirality Induced Spin Selectivity (CISS) effect. Chiral Al2O3 film
grown by ALD on self-assembled monolayer of chiral molecules acts as a spin filter.
Spin polarization is parallel/antiparallel to the electron velocity depending on chirality. Devices show asymmetric magneto-resistance and slopes with opposite sign for
left/right handed chirality. Hence, CISS-effect based device shows, for first time, an
asymmetric magneto-resistance, which has potential application in magnetic memory and magnetic field sensors. Reference: Shinto P. Mathew et al., Appl. Phys.
Lett. 105, 242408 (2014)
Original languageAmerican English
JournalBulletin of the American Physical Society,
Issue number1
StatePublished - 2015


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