Chemically doped random network carbon nanotube p-n junction diode for rectifier

Chandan Biswas, Si Young Lee, Thuc Hue Ly, Arunabha Ghosh, Quoc Nguyen Dang, Young Hee Lee

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

Semiconductors with higher carrier mobility and carrier density are required to fabricate a p-n junction diode for high-speed device operation and high-frequency signal processing. Here, we use a chemically doped semiconducting single-walled carbon nanotube (SWCNT) random network for a field effect transistor (FET) and demonstrate a rectifier operated at a wide range of frequencies by fabricating a p-n junction diode. The p-n diode was fabricated by using a pristine p-type SWCNT-FET where half was covered by SiO 2 and the other half was chemically doped by using benzyl viologen molecules, which was converted into an n-type channel. The half-wave rectifier of the random network SWCNT p-n junction diode clearly highlights the device operation under high input signal frequencies up to 10 MHz with very low output distortion, which a commercial silicon p-n junction diode cannot access. These results indicate that the random network SWCNT p-n junction diodes can be used as building blocks of complex circuits in a range of applications in microelectronics, optoelectronics, sensors, and other systems.

Original languageEnglish
Pages (from-to)9817-9823
Number of pages7
JournalACS Nano
Volume5
Issue number12
DOIs
StatePublished - 27 Dec 2011
Externally publishedYes

Keywords

  • carbon nanotube
  • chemical doping
  • diode
  • p-n junction
  • rectifier

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