Chemical Limit to Semiconductor Device Miniaturization

Igor Lubomirsky; David Cahen

doi:10.1149/1.1390767

Chemical Limit to Semiconductor Device Miniaturization

Igor Lubomirsky, David Cahen

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Dopant flux in a semiconductor junction due to chemical diffusion and drift (electromigration) was analyzed as a possible determining factor for device life expectancy at room temperature. Simple relations are derived and/or recalled to allow estimates of lifetimes. They are shown to be appropriate for III-V heterojunction bipolar transistors. We suggest that this chemical factor must be considered for compound semiconductor devices, as their dimensions shrink.

Original language	English
Pages (from-to)	154-156
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	2
Issue number	3
DOIs	https://doi.org/10.1149/1.1390767
State	Published - Mar 1999
Externally published	Yes

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abstract = "Dopant flux in a semiconductor junction due to chemical diffusion and drift (electromigration) was analyzed as a possible determining factor for device life expectancy at room temperature. Simple relations are derived and/or recalled to allow estimates of lifetimes. They are shown to be appropriate for III-V heterojunction bipolar transistors. We suggest that this chemical factor must be considered for compound semiconductor devices, as their dimensions shrink.",

author = "Igor Lubomirsky and David Cahen",

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Chemical Limit to Semiconductor Device Miniaturization

Abstract

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