Dopant flux in a semiconductor junction due to chemical diffusion and drift (electromigration) was analyzed as a possible determining factor for device life expectancy at room temperature. Simple relations are derived and/or recalled to allow estimates of lifetimes. They are shown to be appropriate for III-V heterojunction bipolar transistors. We suggest that this chemical factor must be considered for compound semiconductor devices, as their dimensions shrink.
|Number of pages||3|
|Journal||Electrochemical and Solid-State Letters|
|State||Published - Mar 1999|