Characterizations of pulsed laser deposited SiC thin films

Y. S. Katharria; Sandeep Kumar; Ram Prakash; R. J. Choudhary; F. Singh; D. M. Phase; D. Kanjilal

doi:10.1016/j.jnoncrysol.2007.07.008

Characterizations of pulsed laser deposited SiC thin films

Y. S. Katharria, Sandeep Kumar, Ram Prakash, R. J. Choudhary, F. Singh, D. M. Phase, D. Kanjilal

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Thin films of silicon carbide (SiC) were prepared using pulsed laser deposition (PLD) on Si(1 0 0) substrates at a temperature of 370 °C. Various structural characterizations showed the development of short-range SiC precipitates in the films. These films were annealed isochronally at temperatures of 800 °C, 1000 °C and 1200 °C for 2 h under an inert environment. Thermally induced crystalline ordering of SiC into β-SiC phase was investigated by X-ray diffraction (XRD), Raman spectroscopy and Fourier transforms infrared (FTIR) spectroscopic measurements. In addition to the crystallization of SiC films, high temperature annealing resulted in the dissolution of carbon clusters found in the as-grown films.

Original language	English
Pages (from-to)	4660-4665
Number of pages	6
Journal	Journal of Non-Crystalline Solids
Volume	353
Issue number	52-54
DOIs	https://doi.org/10.1016/j.jnoncrysol.2007.07.008
State	Published - 15 Dec 2007
Externally published	Yes

Keywords

Atomic force and scanning tunneling microscopy
Laser deposition
Raman scattering
UPS/XPS
X-ray diffraction

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10.1016/j.jnoncrysol.2007.07.008

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title = "Characterizations of pulsed laser deposited SiC thin films",

abstract = "Thin films of silicon carbide (SiC) were prepared using pulsed laser deposition (PLD) on Si(1 0 0) substrates at a temperature of 370 °C. Various structural characterizations showed the development of short-range SiC precipitates in the films. These films were annealed isochronally at temperatures of 800 °C, 1000 °C and 1200 °C for 2 h under an inert environment. Thermally induced crystalline ordering of SiC into β-SiC phase was investigated by X-ray diffraction (XRD), Raman spectroscopy and Fourier transforms infrared (FTIR) spectroscopic measurements. In addition to the crystallization of SiC films, high temperature annealing resulted in the dissolution of carbon clusters found in the as-grown films.",

keywords = "Atomic force and scanning tunneling microscopy, Laser deposition, Raman scattering, UPS/XPS, X-ray diffraction",

author = "Katharria, {Y. S.} and Sandeep Kumar and Ram Prakash and Choudhary, {R. J.} and F. Singh and Phase, {D. M.} and D. Kanjilal",

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doi = "10.1016/j.jnoncrysol.2007.07.008",

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T1 - Characterizations of pulsed laser deposited SiC thin films

AU - Katharria, Y. S.

AU - Kumar, Sandeep

AU - Prakash, Ram

AU - Choudhary, R. J.

AU - Singh, F.

AU - Phase, D. M.

AU - Kanjilal, D.

PY - 2007/12/15

Y1 - 2007/12/15

N2 - Thin films of silicon carbide (SiC) were prepared using pulsed laser deposition (PLD) on Si(1 0 0) substrates at a temperature of 370 °C. Various structural characterizations showed the development of short-range SiC precipitates in the films. These films were annealed isochronally at temperatures of 800 °C, 1000 °C and 1200 °C for 2 h under an inert environment. Thermally induced crystalline ordering of SiC into β-SiC phase was investigated by X-ray diffraction (XRD), Raman spectroscopy and Fourier transforms infrared (FTIR) spectroscopic measurements. In addition to the crystallization of SiC films, high temperature annealing resulted in the dissolution of carbon clusters found in the as-grown films.

AB - Thin films of silicon carbide (SiC) were prepared using pulsed laser deposition (PLD) on Si(1 0 0) substrates at a temperature of 370 °C. Various structural characterizations showed the development of short-range SiC precipitates in the films. These films were annealed isochronally at temperatures of 800 °C, 1000 °C and 1200 °C for 2 h under an inert environment. Thermally induced crystalline ordering of SiC into β-SiC phase was investigated by X-ray diffraction (XRD), Raman spectroscopy and Fourier transforms infrared (FTIR) spectroscopic measurements. In addition to the crystallization of SiC films, high temperature annealing resulted in the dissolution of carbon clusters found in the as-grown films.

KW - Atomic force and scanning tunneling microscopy

KW - Laser deposition

KW - Raman scattering

KW - UPS/XPS

KW - X-ray diffraction

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 52-54

ER -

Characterizations of pulsed laser deposited SiC thin films

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Keywords

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