Characterization of structural defects in highly mismatched GaP nanowires

Ya'Akov Greenberg; Sergei Remennik; Shimon Cohen; Dan Ritter; Louisa Meshi

doi:10.1016/j.matlet.2013.09.053

Characterization of structural defects in highly mismatched GaP nanowires

Ya'Akov Greenberg, Sergei Remennik, Shimon Cohen, Dan Ritter, Louisa Meshi

Research output: Contribution to journal › Article › peer-review

Abstract

Structural defects, found in gallium-phosphide nanowires, grown from Au catalyst on InP 〈111〉B substrate using metal organic molecular beam epitaxy, were extensively studied using Transmission Electron Microscopy (TEM). Several types of growth were analyzed: pure axial, axial-lateral and self catalyzed. Pure axially grown nanowires were found to be single crystals with wurzite crystal structure and Ga-polarity. These nanowires contained threading edge dislocation along the wire axis. The axial-lateral nanowires grew with zinc blend crystal structure and exhibited polycrystalline nature. Self catalyzed single crystalline nanowires possessed wurzite crystal structure with P-polarity and exhibited threading edge dislocations along their axis.

Original language	English
Pages (from-to)	38-41
Number of pages	4
Journal	Materials Letters
Volume	113
DOIs	https://doi.org/10.1016/j.matlet.2013.09.053
State	Published - 2013
Externally published	Yes

Bibliographical note

Funding Information:
The authors thank the financial support of the Russell Berrie Nanotechnology Institute (RBNI), the Israel Ministry of Science and Technology (grant 38668 ) and the Israeli Nanotechnology Focal Technology Area on “Nanophotonics for Detection” for partial funding.

Keywords

Nanocrystalline materials
Semiconductors
Structural analysis

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10.1016/j.matlet.2013.09.053

Cite this

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title = "Characterization of structural defects in highly mismatched GaP nanowires",

abstract = "Structural defects, found in gallium-phosphide nanowires, grown from Au catalyst on InP 〈111〉B substrate using metal organic molecular beam epitaxy, were extensively studied using Transmission Electron Microscopy (TEM). Several types of growth were analyzed: pure axial, axial-lateral and self catalyzed. Pure axially grown nanowires were found to be single crystals with wurzite crystal structure and Ga-polarity. These nanowires contained threading edge dislocation along the wire axis. The axial-lateral nanowires grew with zinc blend crystal structure and exhibited polycrystalline nature. Self catalyzed single crystalline nanowires possessed wurzite crystal structure with P-polarity and exhibited threading edge dislocations along their axis.",

keywords = "Nanocrystalline materials, Semiconductors, Structural analysis",

author = "Ya'Akov Greenberg and Sergei Remennik and Shimon Cohen and Dan Ritter and Louisa Meshi",

note = "Funding Information: The authors thank the financial support of the Russell Berrie Nanotechnology Institute (RBNI), the Israel Ministry of Science and Technology (grant 38668 ) and the Israeli Nanotechnology Focal Technology Area on “Nanophotonics for Detection” for partial funding.",

year = "2013",

doi = "10.1016/j.matlet.2013.09.053",

language = "אנגלית",

volume = "113",

pages = "38--41",

journal = "Materials Letters",

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T1 - Characterization of structural defects in highly mismatched GaP nanowires

AU - Greenberg, Ya'Akov

AU - Remennik, Sergei

AU - Cohen, Shimon

AU - Ritter, Dan

AU - Meshi, Louisa

N1 - Funding Information: The authors thank the financial support of the Russell Berrie Nanotechnology Institute (RBNI), the Israel Ministry of Science and Technology (grant 38668 ) and the Israeli Nanotechnology Focal Technology Area on “Nanophotonics for Detection” for partial funding.

PY - 2013

Y1 - 2013

N2 - Structural defects, found in gallium-phosphide nanowires, grown from Au catalyst on InP 〈111〉B substrate using metal organic molecular beam epitaxy, were extensively studied using Transmission Electron Microscopy (TEM). Several types of growth were analyzed: pure axial, axial-lateral and self catalyzed. Pure axially grown nanowires were found to be single crystals with wurzite crystal structure and Ga-polarity. These nanowires contained threading edge dislocation along the wire axis. The axial-lateral nanowires grew with zinc blend crystal structure and exhibited polycrystalline nature. Self catalyzed single crystalline nanowires possessed wurzite crystal structure with P-polarity and exhibited threading edge dislocations along their axis.

AB - Structural defects, found in gallium-phosphide nanowires, grown from Au catalyst on InP 〈111〉B substrate using metal organic molecular beam epitaxy, were extensively studied using Transmission Electron Microscopy (TEM). Several types of growth were analyzed: pure axial, axial-lateral and self catalyzed. Pure axially grown nanowires were found to be single crystals with wurzite crystal structure and Ga-polarity. These nanowires contained threading edge dislocation along the wire axis. The axial-lateral nanowires grew with zinc blend crystal structure and exhibited polycrystalline nature. Self catalyzed single crystalline nanowires possessed wurzite crystal structure with P-polarity and exhibited threading edge dislocations along their axis.

KW - Nanocrystalline materials

KW - Semiconductors

KW - Structural analysis

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JO - Materials Letters

JF - Materials Letters

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Characterization of structural defects in highly mismatched GaP nanowires

Abstract

Bibliographical note

Keywords

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