Characterization of structural defects in highly mismatched GaP nanowires

Ya'Akov Greenberg, Sergei Remennik, Shimon Cohen, Dan Ritter, Louisa Meshi

Research output: Contribution to journalArticlepeer-review


Structural defects, found in gallium-phosphide nanowires, grown from Au catalyst on InP 〈111〉B substrate using metal organic molecular beam epitaxy, were extensively studied using Transmission Electron Microscopy (TEM). Several types of growth were analyzed: pure axial, axial-lateral and self catalyzed. Pure axially grown nanowires were found to be single crystals with wurzite crystal structure and Ga-polarity. These nanowires contained threading edge dislocation along the wire axis. The axial-lateral nanowires grew with zinc blend crystal structure and exhibited polycrystalline nature. Self catalyzed single crystalline nanowires possessed wurzite crystal structure with P-polarity and exhibited threading edge dislocations along their axis.

Original languageEnglish
Pages (from-to)38-41
Number of pages4
JournalMaterials Letters
StatePublished - 2013
Externally publishedYes

Bibliographical note

Funding Information:
The authors thank the financial support of the Russell Berrie Nanotechnology Institute (RBNI), the Israel Ministry of Science and Technology (grant 38668 ) and the Israeli Nanotechnology Focal Technology Area on “Nanophotonics for Detection” for partial funding.


  • Nanocrystalline materials
  • Semiconductors
  • Structural analysis


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