Abstract
Structural defects, found in gallium-phosphide nanowires, grown from Au catalyst on InP 〈111〉B substrate using metal organic molecular beam epitaxy, were extensively studied using Transmission Electron Microscopy (TEM). Several types of growth were analyzed: pure axial, axial-lateral and self catalyzed. Pure axially grown nanowires were found to be single crystals with wurzite crystal structure and Ga-polarity. These nanowires contained threading edge dislocation along the wire axis. The axial-lateral nanowires grew with zinc blend crystal structure and exhibited polycrystalline nature. Self catalyzed single crystalline nanowires possessed wurzite crystal structure with P-polarity and exhibited threading edge dislocations along their axis.
Original language | English |
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Pages (from-to) | 38-41 |
Number of pages | 4 |
Journal | Materials Letters |
Volume | 113 |
DOIs | |
State | Published - 2013 |
Externally published | Yes |
Bibliographical note
Funding Information:The authors thank the financial support of the Russell Berrie Nanotechnology Institute (RBNI), the Israel Ministry of Science and Technology (grant 38668 ) and the Israeli Nanotechnology Focal Technology Area on “Nanophotonics for Detection” for partial funding.
Funding
The authors thank the financial support of the Russell Berrie Nanotechnology Institute (RBNI), the Israel Ministry of Science and Technology (grant 38668 ) and the Israeli Nanotechnology Focal Technology Area on “Nanophotonics for Detection” for partial funding.
Funders | Funder number |
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Israel Ministry of Science and Technology | 38668 |
Israeli Nanotechnology Focal Technology Area on “Nanophotonics for Detection | |
Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology |
Keywords
- Nanocrystalline materials
- Semiconductors
- Structural analysis