Characterization of nanocrystallites in porous p-type 6H-SiC

J. S. Shor; L. Bemis; A. D. Kurtz; I. Grimberg; B. Z. Weiss; M. F. MacMillian; W. J. Choyke

doi:10.1063/1.357352

Characterization of nanocrystallites in porous p-type 6H-SiC

J. S. Shor
, L. Bemis
, A. D. Kurtz
, I. Grimberg
, B. Z. Weiss
, M. F. MacMillian
, W. J. Choyke

Kulite Semiconductor Products, Inc.
Technion-Israel Institute of Technology
University of Pittsburgh

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

We report the formation of porous p-type 6H-SiC. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of 1-10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H-SiC have been observed in the porous layer, but were not distinguished in the bulk SiC substrate. Quantum confinement is discussed as a possible mechanism for the luminescence effects.

Original language	English
Pages (from-to)	4045-4049
Number of pages	5
Journal	Journal of Applied Physics
Volume	76
Issue number	7
DOIs	https://doi.org/10.1063/1.357352
State	Published - 1994
Externally published	Yes

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title = "Characterization of nanocrystallites in porous p-type 6H-SiC",

abstract = "We report the formation of porous p-type 6H-SiC. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of 1-10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H-SiC have been observed in the porous layer, but were not distinguished in the bulk SiC substrate. Quantum confinement is discussed as a possible mechanism for the luminescence effects.",

author = "Shor, \{J. S.\} and L. Bemis and Kurtz, \{A. D.\} and I. Grimberg and Weiss, \{B. Z.\} and MacMillian, \{M. F.\} and Choyke, \{W. J.\}",

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doi = "10.1063/1.357352",

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AU - Shor, J. S.

AU - Bemis, L.

AU - Kurtz, A. D.

AU - Grimberg, I.

AU - Weiss, B. Z.

AU - MacMillian, M. F.

AU - Choyke, W. J.

PY - 1994

Y1 - 1994

N2 - We report the formation of porous p-type 6H-SiC. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of 1-10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H-SiC have been observed in the porous layer, but were not distinguished in the bulk SiC substrate. Quantum confinement is discussed as a possible mechanism for the luminescence effects.

AB - We report the formation of porous p-type 6H-SiC. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of 1-10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H-SiC have been observed in the porous layer, but were not distinguished in the bulk SiC substrate. Quantum confinement is discussed as a possible mechanism for the luminescence effects.

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JO - Journal of Applied Physics

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Characterization of nanocrystallites in porous p-type 6H-SiC

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