Abstract
We report the formation of porous p-type 6H-SiC. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of 1-10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H-SiC have been observed in the porous layer, but were not distinguished in the bulk SiC substrate. Quantum confinement is discussed as a possible mechanism for the luminescence effects.
Original language | English |
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Pages (from-to) | 4045-4049 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 76 |
Issue number | 7 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |