Characterization of nanocrystallites in porous p-type 6H-SiC

J. S. Shor, L. Bemis, A. D. Kurtz, I. Grimberg, B. Z. Weiss, M. F. MacMillian, W. J. Choyke

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Abstract

We report the formation of porous p-type 6H-SiC. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of 1-10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H-SiC have been observed in the porous layer, but were not distinguished in the bulk SiC substrate. Quantum confinement is discussed as a possible mechanism for the luminescence effects.

Original languageEnglish
Pages (from-to)4045-4049
Number of pages5
JournalJournal of Applied Physics
Volume76
Issue number7
DOIs
StatePublished - 1994
Externally publishedYes

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