Abstract
SiC is currently being investigated for device applications involving high temperatures. In this paper, the properties of n-type β-SiC relevant to piezoresistive devices, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are characterized for several doping levels. The maximum gauge factor observed was −31.8 for unintentionally doped (1016-1017/cm3) material. This gauge factor decreases with temperature to approximately half its room-temperature value at 450°C. Unintentionally doped SiC has a roughly constant TCR of 0.72%/°C over the range 25-800°C and exhibits full impurity ionization at room temperature. Degenerately doped gauges (Nd = 1020/cm3) exhibited a lower gauge factor (−12.7), with a more constant temperature behavior and a lower TCR (0.04%/°C). The mechanisms of the piezoresistive effect and TCR in n-SiC are discussed, as well as their application towards sensors.
Original language | English |
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Pages (from-to) | 1093-1099 |
Number of pages | 7 |
Journal | IEEE Transactions on Electron Devices |
Volume | 40 |
Issue number | 6 |
DOIs | |
State | Published - Jun 1993 |
Externally published | Yes |