Characterization of n-Type β-SiC as a Piezoresistor

Joseph S. Shor, David Goldstein, Anthony D. Kurtz

Research output: Contribution to journalArticlepeer-review

148 Scopus citations

Abstract

SiC is currently being investigated for device applications involving high temperatures. In this paper, the properties of n-type β-SiC relevant to piezoresistive devices, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are characterized for several doping levels. The maximum gauge factor observed was −31.8 for unintentionally doped (1016-1017/cm3) material. This gauge factor decreases with temperature to approximately half its room-temperature value at 450°C. Unintentionally doped SiC has a roughly constant TCR of 0.72%/°C over the range 25-800°C and exhibits full impurity ionization at room temperature. Degenerately doped gauges (Nd = 1020/cm3) exhibited a lower gauge factor (−12.7), with a more constant temperature behavior and a lower TCR (0.04%/°C). The mechanisms of the piezoresistive effect and TCR in n-SiC are discussed, as well as their application towards sensors.

Original languageEnglish
Pages (from-to)1093-1099
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume40
Issue number6
DOIs
StatePublished - Jun 1993
Externally publishedYes

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