Abstract
Monolithic, junction isolated piezoresistors have been fabricated in commercially available 6H-SiC. The gauge factor (GF) of these elements has been measured up to 250° C in both longitudinal and transverse configurations. The maximum GF observed was —29.4, corresponding to the piezoresistive coefficient π11. A beam transducer with a four-arm integral piezoresistor network was fabricated and tested in a force sensor configuration. The data indicate that n-type 6H-SiC has the potential to be useful in high temperature electromechanical sensors to measure parameters such as pressure, force, strain and acceleration.
| Original language | English |
|---|---|
| Pages (from-to) | 661-665 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 41 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 1994 |
| Externally published | Yes |
Bibliographical note
Funding Information:Manuscript received June 23, 1993; revised December I, 1993. The review of this paper was arranged by Associate Editor S. D. Senturia. This work was supported by the NASA Lewis Phase I SBIR program under the management of Lawrence G. Matus. The authors are with Kulite Semiconductor Products, Inc., Leonia, NJ 07605, USA. IEEE Log Number 9400010.
Funding
Manuscript received June 23, 1993; revised December I, 1993. The review of this paper was arranged by Associate Editor S. D. Senturia. This work was supported by the NASA Lewis Phase I SBIR program under the management of Lawrence G. Matus. The authors are with Kulite Semiconductor Products, Inc., Leonia, NJ 07605, USA. IEEE Log Number 9400010.
| Funders | Funder number |
|---|---|
| National Aeronautics and Space Administration |